Light-emitting device

• US 9,786,815 B2
• Filed: 08/18/2016
• Issued: 10/10/2017
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Wu, Jar-Yu, Su, Ching-Jang, Tseng, Chun-Lung, Shen, Ching-Hsing
• Primary Examiner(s): Arroyo, Teresa M
• Application Number:
  US15/240,264
• Publication Number:
  US 20160359088A1
• Time in Patent Office: 418 Days
• Field of Search: 257 99, 257 90, 438 26, 438 47
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/002 having heterojunctions or graded gap
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light-emitting device is disclosed. The light-emitting device comprises a substrate; an inorganic semiconductor formed on the substrate, comprising a top surface, wherein the top surface comprises a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer comprises an insulating material; and a transparent conductive layer formed on the current barrier layer and contacting the second region; wherein the current barrier layer has a sidewall and a bottom surface facing the first region; wherein an angle between the sidewall and the bottom surface is between 10°-70°.

Claims

1. A light-emitting device, comprising:

a substrate;

an inorganic semiconductor stack formed on the substrate, comprising a top surface, wherein the top surface comprises a first region and a second region which are coplanar;

a current barrier layer formed on the first region, wherein the current barrier layer comprises an insulating material; and

a transparent conductive layer formed on the current barrier layer and the second region;

wherein the current barrier layer has a sidewall and a bottom surface facing the first region, and

wherein an angle between the sidewall and the bottom surface is between 10° and

70°

C.

2. The light-emitting device of claim 1, wherein the transparent conductive layer is formed between the sidewall of the current barrier layer and the second region of the inorganic semiconductor stack, wherein a difference between a thickness of the transparent conductive layer at the sidewall on the current barrier layer and a thickness of the transparent conductive layer on the second region of the inorganic semiconductor stack forms a ratio not larger than 10%.

3. The light-emitting device of claim 1, further comprising:

a first electrode formed on the transparent conductive layer at a position corresponding to the current barrier layer, wherein the first electrode has a shape substantially the same as the current barrier layer.

4. The light-emitting device of claim 3, wherein an area of the current barrier layer is larger than an area of the first electrode.

5. The light-emitting device of claim 1, wherein a thickness of the current barrier layer is larger than 3000 angstroms and less than 9700 angstroms.

6. The light-emitting device of claim 1, further comprising:

an electrode formed on the transparent conductive layer, wherein

the electrode comprises an electrode pad and an extended electrode; and

the current barrier layer comprises an electrode region at a position corresponding to the electrode, and an extension region not covered by the extended electrode.

7. The light-emitting device of claim 6, wherein the inorganic semiconductor stack comprises four sides, and the extension region extends to the four sides.

8. The light-emitting device of claim 6, wherein the electrode region has a shape substantially the same with as the electrode pad.

9. The light-emitting device of claim 3, further comprising:

a second electrode, wherein the first electrode comprises a first electrode pad and an extended electrode extending from the first electrode pad to the second electrode.

10. The light-emitting device of claim 9, wherein the first electrode pad and the second electrode are formed on opposite sides of the inorganic semiconductor stack.

11. The light-emitting device of claim 1, wherein the current barrier layer comprises silicon oxide (SiO₂), silicon nitride (SiN_x) or titanium dioxide (TiO₂).

12. The light-emitting device of claim 1, wherein the current barrier layer has a resistance larger than 10¹⁴ Ω

-cm.

13. The light-emitting device of claim 1, wherein the substrate comprises an inclined sidewall.

14. The light-emitting device of claim 13, wherein the inclined sidewall comprises a rough surface.

15. The light-emitting device of claim 1, wherein the transparent conductive layer contacts the second region.