Radio frequency front end system with an integrated transmit/receive switch

• US 9,787,352 B2
• Filed: 05/18/2015
• Issued: 10/10/2017
• Est. Priority Date: 08/05/2011
• Status: Active Grant

• Current Assignee: MediaTek, Inc.
• Original Assignee: MediaTek, Inc.
• Inventors: Chee, Yuen Hui, Jerng, Albert Chia-Wen
• Primary Examiner(s): AYOTUNDE, AYODEJI O
• Application Number:
  US14/715,134
• Publication Number:
  US 20160020818A1
• Time in Patent Office: 876 Days
• Field of Search: 455 82, 455 83
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence
• CPC Class Codes: H04B 1/525 with means for reducing leakage of transmitter signal into the receiver
• CPC Class Codes: Y10T 29/49018 with other electrical component

Abstract

A Radio Frequency (RF) front end system and method are disclosed. The RF front end system comprises an antenna, a matching network coupled to the antenna, a power amplifier (PA) coupled to the matching network via a port on a transmit path, a low noise amplifier (LNA) coupled to the matching network via the port on a receive path and at least one transmit/receive switch (T/R SW) coupled between the port and at least one of the PA and LNA.

Claims

1. A Radio Frequency (RF) front end system comprising:

a power amplifier (PA) configured to couple to a matching network via a port on a transmit (TX) path;

a low noise amplifier (LNA) configured to couple to the matching network via the port on a receive (RX) path, wherein the PA and the LNA are combined together at the port; and

a transmit/receive switch (T/R SW) coupled in series between the port and the LNA, and a non-switchable direct connection formed between the PA and the port; and

wherein an output stage of the PA is configured to perform switching functionality.

2. The RF front end system of claim 1, wherein the port is a single RF port.

3. The RF front end system of claim 1, wherein the output stage of the PA includes a power supply pin Vdd differentially coupled to first and second input devices and to first and second cascade devices, wherein the first input device is in series with the first cascade device and the second input device is in series with the second cascade device, wherein the first input device and first cascade device provide a first differential output signal and the second input device and second cascade device provide a second differential output signal.

4. The RF front end system of claim 3, wherein the first and second input devices are thin oxide devices and the first and second cascade devices are thick oxide devices.

5. The RF front end system of claim 1, wherein the output stage of the PA is single-ended.

6. The RF front end system of claim 1, wherein the LNA is a common-gate LNA.

7. The RF front end system of claim 6, wherein the common-gate LNA includes a power supply pin Vdd differentially coupled to first and second input devices and first and second cascade devices, wherein the first input device is in series with the first cascade device and the second input device is in series with the second cascade device, wherein the first input device and first cascade device provide a first differential output signal and the second input device and second cascade device provide a second differential output signal.

8. The RF front end system of claim 7, wherein an input impedance of the common-gate LNA is inversely proportional to a transconductance of the first and second input devices.

9. The RF front end system of claim 8, wherein the input impedance is a common RF port impedance.

10. The RF front end system of claim 6, wherein the common-gate LNA is single-ended.

11. The RF front end system of claim 1, wherein the LNA is a cross-coupled common-gate LNA.

12. The RF front end system of claim 1, wherein the LNA is a common source LNA with feedback implementation.

13. The RF front end system of claim 1, wherein the at least one T/R SW includes first and second series transistors, first, second and third shunt transistors, first and second input signals, and first and second output signals.

14. The RF front end system of claim 1, wherein the at least one T/R SW is single-ended.

15. The RF front end system of claim 1, wherein the at least one T/R SW is implemented using a field-effect transistor (FET) or a transmission gate.

16. The RF front end system of claim 1, wherein the at least one T/R SW is a plurality of transmit-receive switches.

17. A method for creating a Radio Frequency (RF) front end, the method comprising:

coupling a power amplifier (PA) to a matching network via a port on a transmit (TX) path;

coupling a low noise amplifier (LNA) to the matching network via the port on a receive (RX) path, wherein the PA and the LNA are combined together at the port;

coupling a transmit/receive switch (T/R SW) in series between the port and the LNA, and providing a non-switchable direct connection between the PA and the port;

and

combining the PA and the LNA together at the port, wherein an output stage of the PA is configured to perform switching functionality.

18. The method of claim 17, further comprising integrating an antenna and the matching network off-chip.