Method and system to reduce outgassing in a reaction chamber

• US 9,790,595 B2
• Filed: 01/27/2015
• Issued: 10/17/2017
• Est. Priority Date: 07/12/2013
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Jung, Sung-Hoon, Raisanen, Petri, Liu, Eric Jen Cheng, Schmotzer, Mike
• Primary Examiner(s): Miller, Jr., Joseph
• Application Number:
  US14/606,364
• Publication Number:
  US 20150140210A1
• Time in Patent Office: 994 Days
• Field of Search: None
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45534 Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
• CPC Class Codes: C23C 16/45544 characterized by the apparatus

Abstract

Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Claims

1. A method of reducing outgassing of a substance, the method comprising the steps of:

providing a gas-phase reactor comprising a reaction chamber, the reaction chamber comprising a surface having hygroscopic material deposited thereon;

before providing a substrate within the reaction chamber, forming a barrier layer comprising one or more of TiO₂, HfO₂, SiO₂, TiN, TiON, and TiC on the surface having hygroscopic material deposited thereon to mitigate outgassing of one or more gasses absorbed or adsorbed by the hygroscopic material;

providing the substrate within the reaction chamber;

depositing the hygroscopic material comprising one or more of lanthanum oxide, magnesium oxide, barium oxide, and strontium oxide onto a surface of the substrate within the reaction chamber, wherein depositing the hygroscopic material further comprises providing a scavenging precursor to the reaction chamber to react with material on a surface of the reaction chamber;

removing the substrate from the reaction chamber;

providing another substrate within the reaction chamber; and

depositing hygroscopic material onto the another substrate and removing the another substrate before repeating the step of forming a barrier layer comprising the one or more of TiO₂, HfO₂, SiO₂, TiN, TiON, and TiC,

wherein the scavenging precursor is substantially consumed prior to reaching the substrate.

2. The method of reducing outgassing of a substance of claim 1, wherein the step of providing a gas-phase reactor comprises providing an atomic layer deposition reactor.

3. The method of reducing outgassing of a substance of claim 1, wherein the step of depositing comprises:

providing a first precursor to the reaction chamber, the first precursor reacting with a surface of the substrate to form a first surface species;

purging the first precursor from the reaction chamber;

providing a second precursor to the reaction chamber to react with the first surface species to form a second surface species; and

purging the second precursor from the reaction chamber, and

wherein the step of forming the barrier layer comprises providing the first precursor or the second precursor.

4. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer selected from one or more of:

a transition metal oxide layer, a transition metal nitride layer, a transition metal oxynitride layer, and a transition metal carbide layer.

5. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising one or more of HfO₂, SiO₂, TiN, TiON, and TiC.

6. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising HfO₂.

7. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises depositing between about one monolayer and about 50 Å

of barrier material onto the surface of the reaction chamber.

8. The method of reducing outgassing of a substance of claim 1, wherein the hygroscopic material comprises lanthanum oxide.

9. The method of reducing outgassing of a substance of claim 1, wherein the step of depositing hygroscopic material comprises providing trimethylaluminum.

10. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising TiO₂.

11. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer further comprises forming a layer comprising Ta₂O₅.

12. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising SiO₂.

13. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising TiN.

14. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising TiON.

15. The method of reducing outgassing of a substance of claim 1, wherein the step of forming a barrier layer comprises forming a layer comprising TiC.

16. The method of reducing outgassing of a substance of claim 1, wherein the one or more gasses comprise a precursor used to form the hygroscopic material.

17. The method of reducing outgassing of a substance of claim 1, further comprising monitoring the scavenging precursor on a surface of the reaction chamber utilizing a dose front monitoring device.

18. The method of reducing outgassing of a substance of claim 1, further comprising selecting the scavenging precursor to comprise one or more of a metal chloride or an organometallic compound.

19. The method of reducing outgassing of a substrate of claim 18, further comprising selecting the scavenging precursor to comprise one or more of hafnium chloride or silicon chloride.

20. A method of reducing outgassing of a substance, the method comprising the steps of:

providing a gas-phase reactor comprising a reaction chamber, the reaction chamber comprising a surface having hygroscopic material deposited thereon;

before providing a substrate within the reaction chamber, forming a barrier layer comprising one or more of TiO₂, Ta₂O₅, HfO₂, SiO₂, TiN, TiON, and TiC on the surface having hygroscopic material deposited thereon to mitigate outgassing of one or more gasses absorbed or adsorbed by the hygroscopic material;

depositing hygroscopic material comprising one or more of lanthanum oxide, magnesium oxide, barium oxide, and strontium oxide onto a surface of the substrate within the reaction chamber, wherein depositing the hygroscopic material further comprises providing a scavenging precursor to the reaction chamber to react with material on a surface of the reaction chamber;

removing the substrate from the reaction chamber; and

depositing hygroscopic material on another substrate and removing the another substrate before repeating the step of forming a barrier layer comprising the one or more of TiO₂, Ta₂O₅, HfO₂, SiO₂, TiN, TiON, and TiC,

wherein the scavenging precursor is substantially consumed prior to reaching the substrate.

21. The method of reducing outgassing of a substance of claim 20, wherein the barrier layer comprises HfO₂.

22. The method of reducing outgassing of a substance of claim 20, wherein the hygroscopic material comprises lanthanum oxide.