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Semiconductor device arrangement and a method for forming a semiconductor device arrangement

  • US 9,793,182 B2
  • Filed: 09/12/2014
  • Issued: 10/17/2017
  • Est. Priority Date: 09/12/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device arrangement comprising:

  • a semiconductor substrate comprising a semiconductor substrate front side and a semiconductor substrate back side, wherein the semiconductor substrate comprises at least one electrical element formed at the semiconductor substrate front side; and

    a plurality of porous semiconductor regions formed at the semiconductor substrate back side,wherein a density of the porous semiconductor regions is less than a density of non-porous semiconductor material separating the porous semiconductor regions.

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