Manufacturing method of semiconductor device

• US 9,793,383 B2
• Filed: 03/08/2016
• Issued: 10/17/2017
• Est. Priority Date: 08/16/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Noda, Kosei, Sasaki, Toshinari
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US15/063,883
• Publication Number:
  US 20160190291A1
• Time in Patent Office: 588 Days
• Field of Search: 257 43, 257 66, 257 67, 257 72, 438104, 438149, 438157, 438161, 438164
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide insulating film over a substrate by sputtering method;

forming an oxide semiconductor film over and in contact with an entire top surface of the oxide insulating film;

performing a heat treatment after forming the oxide semiconductor film;

forming an island-shaped oxide semiconductor film by etching parts of the oxide semiconductor film after performing the heat treatment;

forming a gate insulating film over the island-shaped oxide semiconductor film; and

forming a gate electrode overlapping with the island-shaped oxide semiconductor film with the gate insulating film provided therebetween,

wherein hydrogen concentration in the oxide semiconductor film is reduced by the heat treatment,

wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C., and

wherein an amount of oxygen desorbed from the oxide insulating film by the heat treatment is higher than or equal to 1.0×

10¹⁸ atoms/cm³.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the amount of oxygen desorbed from the oxide insulating film by the heat treatment is measured by thermal desorption spectroscopy analysis.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide insulating film has a thickness from 200 nm to 500 nm.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide insulating film comprises silicon oxide.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the gate insulating film comprises silicon oxide.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide insulating film contains oxygen with a first proportion higher than a proportion of oxygen in a stoichiometric composition.

7. The method for manufacturing a semiconductor device according to claim 1, wherein oxygen vacancies in the oxide semiconductor film is reduced by the heat treatment.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the heat treatment is performed in one of an inert gas atmosphere and an oxidative atmosphere.

9. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide insulating film on a substrate by sputtering method;

forming an oxide semiconductor film over and in contact with an entire top surface of the oxide insulating film;

performing a heat treatment after forming the oxide semiconductor film;

forming an island-shaped oxide semiconductor film by etching the oxide semiconductor film after performing the heat treatment;

forming source and drain electrodes on the island-shaped oxide semiconductor film,

wherein hydrogen concentration in the oxide semiconductor film is reduced by the heat treatment,

wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C., and

wherein an amount of oxygen desorbed from the oxide insulating film by the heat treatment is higher than or equal to 1.0×

10¹⁸ atoms/cm³.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the amount of oxygen desorbed from the oxide insulating film by the heat treatment is measured by thermal desorption spectroscopy analysis.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide insulating film has a thickness from 200 nm to 500 nm.

12. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide insulating film comprises silicon oxide.

13. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide insulating film contains oxygen with a higher proportion than a proportion of oxygen in a stoichiometric composition.

14. The method for manufacturing a semiconductor device according to claim 9, wherein oxygen vacancies in the oxide semiconductor film is reduced by the heat treatment.

15. The method for manufacturing a semiconductor device according to claim 9, wherein the heat treatment is performed in one of an inert gas atmosphere and an oxidative atmosphere.

16. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide insulating film over a substrate by sputtering method;

forming an oxide semiconductor film covering an entire top surface of the oxide insulating film;

performing a heat treatment after the oxide insulating film is covered with the oxide semiconductor film;

forming an island-shaped oxide semiconductor film by etching parts of the oxide semiconductor film after performing the heat treatment;

forming source and drain electrodes over the island-shaped oxide semiconductor film;

forming a gate insulating film over the island-shaped oxide semiconductor film and the source and drain electrodes; and

forming a gate electrode overlapping with the island-shaped oxide semiconductor film with the gate insulating film provided therebetween,

wherein hydrogen concentration in the oxide semiconductor film is reduced by the heat treatment,

wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C., and

wherein an amount of oxygen desorbed from the oxide insulating film by the heat treatment is higher than or equal to 1.0×

10¹⁸ atoms/cm³.

17. The method for manufacturing a semiconductor device according to claim 16, wherein the amount of oxygen desorbed from the oxide insulating film by the heat treatment is measured by thermal desorption spectroscopy analysis.

18. The method for manufacturing a semiconductor device according to claim 16, wherein the oxide insulating film has a thickness from 200 nm to 500 nm.

19. The method for manufacturing a semiconductor device according to claim 16, wherein the oxide insulating film comprises silicon oxide.

20. The method for manufacturing a semiconductor device according to claim 16, wherein the gate insulating film comprises silicon oxide.

21. The method for manufacturing a semiconductor device according to claim 16, wherein the oxide insulating film contains oxygen with a first proportion higher than a proportion of oxygen in a stoichiometric composition.

22. The method for manufacturing a semiconductor device according to claim 16, wherein oxygen vacancies in the oxide semiconductor film is reduced by the heat treatment.

23. The method for manufacturing a semiconductor device according to claim 16, wherein the heat treatment is performed in one of an inert gas atmosphere and an oxidative atmosphere.