MOSFET device and fabrication
First Claim
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1. A semiconductor device, comprising:
- a substrate;
an active gate trench in the substrate;
a source polysilicon pickup trench in the substrate;
a polysilicon electrode disposed in the source polysilicon pickup trench;
a body region in the substrate; and
an insulating spacer that is adjacent to a top portion of the source polysilicon pickup trench, that extends above the polysilicon electrode disposed in the source polysilicon pickup trench, that allows the source polysilicon pickup trench to be formed by self-aligned etching, that is at least in part in contact with the body region, and that separates the body region from a sidewall of the source polysilicon pickup trench;
wherein;
a top side of the polysilicon electrode is below a bottom of the body region.
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Abstract
A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of the body region.
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Citations
16 Claims
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1. A semiconductor device, comprising:
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a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a body region in the substrate; and an insulating spacer that is adjacent to a top portion of the source polysilicon pickup trench, that extends above the polysilicon electrode disposed in the source polysilicon pickup trench, that allows the source polysilicon pickup trench to be formed by self-aligned etching, that is at least in part in contact with the body region, and that separates the body region from a sidewall of the source polysilicon pickup trench;
wherein;a top side of the polysilicon electrode is below a bottom of the body region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a semiconductor device, comprising:
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forming an insulating spacer; forming an active gate trench and a source polysilicon pickup trench in a substrate, including performing self-aligned etching using at least the insulating spacer to form the source polysilicon pickup trench, wherein the insulating spacer is adjacent to a top portion of the source polysilicon pickup trench; forming an active gate electrode in the active gate trench and a polysilicon electrode in the source polysilicon pickup trench, wherein the insulating spacer is adjacent to a top portion of the source polysilicon pickup trench and extends above the polysilicon electrode in the source polysilicon pickup trench; and implanting a body region;
wherein;the polysilicon electrode has a top side that is below a bottom of the body region; and the insulating spacer and the body region are formed in such a way that the insulating spacer is at least in part in contact with the body region and the insulating spacer separates the body region from a side wall of the source polysilicon pickup trench. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification