Oxide semiconductor film

• US 9,793,414 B2
• Filed: 02/02/2016
• Issued: 10/17/2017
• Est. Priority Date: 06/19/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Wright, Tucker J
• Application Number:
  US15/012,944
• Publication Number:
  US 20160149048A1
• Time in Patent Office: 623 Days
• CPC Class Codes: C01G 15/006 Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
• CPC Class Codes: C01P 2002/77 by unit-cell parameters, atom positions or structure diagrams
• CPC Class Codes: C01P 2002/78 by stacking-plane distances or stacking sequences
• CPC Class Codes: C01P 2004/24 Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
• CPC Class Codes: C01P 2006/10 Solid density
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02587 Structure
• CPC Class Codes: H01L 21/02592 amorphous
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 41/60 the control gate being a doped region, e.g. single-poly memory cell

Abstract

To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.

Claims

1. A display device comprising:

a gate electrode;

an oxide semiconductor film;

a gate insulating layer between the gate electrode and the oxide semiconductor film;

a source electrode and a drain electrode each electrically connected to the oxide semiconductor film;

an insulating layer over the source electrode and the drain electrode; and

an electrode over the insulating layer electrically connected to one of the source electrode and the drain electrode,

wherein the oxide semiconductor film comprises a plurality of plate particles,

wherein the plurality of plate particles are arranged irregularly, and

wherein the plurality of plate particles each have regularity in atomic arrangement.

2. The display device according to claim 1, wherein a crystal boundary in the oxide semiconductor film is not observed by using a transmission electron microscope.

3. The display device according to claim 1, wherein the plurality of plate particles each have a thickness of greater than or equal to 0.5 nm and less than or equal to 0.9 nm and an equivalent circle diameter of greater than or equal to 1 nm and less than or equal to 3 nm.

4. The display device according to claim 1, wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern of the oxide semiconductor film.

5. The display device according to claim 4, wherein a probe diameter of an electron beam is larger than or equal to 1 nm and smaller than or equal to 30 nm.

6. The display device according to claim 1,

wherein the plurality of plate particles each have a crystal part.

7. A display device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor film over the gate insulating layer;

a source electrode and a drain electrode each electrically connected to the oxide semiconductor film;

an insulating layer over the source electrode and the drain electrode; and

an electrode over the insulating layer electrically connected to one of the source electrode and the drain electrode,

wherein the oxide semiconductor film comprises a plurality of plate particles each including indium, gallium, zinc, and oxygen,

wherein the plurality of plate particles are arranged irregularly, and

wherein the plurality of plate particles each have regularity in atomic arrangement.

8. The display device according to claim 7, wherein a crystal boundary in the oxide semiconductor film is not observed by using a transmission electron microscope.

9. The display device according to claim 7, wherein the plurality of plate particles each have a thickness of greater than or equal to 0.5 nm and less than or equal to 0.9 nm and an equivalent circle diameter of a plane of greater than or equal to 1 nm and less than or equal to 3 nm.

10. The display device according to claim 7, wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern of the oxide semiconductor film.

11. The display device according to claim 10, wherein a probe diameter of an electron beam is larger than or equal to 1 nm and smaller than or equal to 30 nm.

12. The display device according to claim 7,

wherein the plurality of plate particles each have a crystal part.

13. A display device comprising:

a transistor comprising;

a gate electrode,

an oxide semiconductor film,

a gate insulating layer between the gate electrode and the oxide semiconductor film, and

a source electrode and a drain electrode electrically connected to the oxide semiconductor film; and

a capacitor comprising;

a first electrode,

one of the source electrode and the drain electrode, and

a first insulating layer between the first electrode and the one of the source electrode and the drain electrode;

a second insulating layer over the transistor and the capacitor; and

an electrode over the second insulating layer electrically connected to the one of the source electrode and the drain electrode,

wherein the oxide semiconductor film comprises a plurality of plate particles,

wherein the plurality of plate particles are arranged irregularly, and

wherein the plurality of plate particles each have regularity in atomic arrangement.

14. The display device according to claim 13, wherein a crystal boundary in the oxide semiconductor film is not observed by using a transmission electron microscope.

15. The display device according to claim 13, wherein the plurality of plate particles each have a thickness of greater than or equal to 0.5 nm and less than or equal to 0.9 nm and an equivalent circle diameter of a plane of greater than or equal to 1 nm and less than or equal to 3 nm.

16. The display device according to claim 13, wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern of the oxide semiconductor film.

17. The display device according to claim 16, wherein a probe diameter of an electron beam is larger than or equal to 1 nm and smaller than or equal to 30 nm.

18. The display device according to claim 13,

wherein the plurality of plate particles each have a crystal part.