Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
First Claim
1. A light emitting device configured as a laser device, comprising:
- a semipolar III-nitride film including a light emitting device structure, wherein;
the light emitting device structure includes a diode structure including a semipolar III-nitride active layer, the diode structure having a current-voltage (I-V) characteristic,material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square,the material properties are effective to achieve the I-V characteristic exhibiting a turn-on voltage of at most 3.1 Volts, andthe drive current density is direct current density; and
an edge configured on the light emitting device structure for emission of light.
0 Assignments
0 Petitions
Accused Products
Abstract
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
75 Citations
20 Claims
-
1. A light emitting device configured as a laser device, comprising:
-
a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes a diode structure including a semipolar III-nitride active layer, the diode structure having a current-voltage (I-V) characteristic, material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square, the material properties are effective to achieve the I-V characteristic exhibiting a turn-on voltage of at most 3.1 Volts, and the drive current density is direct current density; and an edge configured on the light emitting device structure for emission of light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A light emitting device configured as a laser device, comprising:
-
a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes a semipolar III-nitride active layer, material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square, the material properties are effective to obtain the device that does not exhibit heating effects or saturation as the drive current density is increased from 33 Amps per centimeter square to 222 Amps per centimeter square, and the drive current density is direct current density; and an edge configured on the light emitting device structure for emission of light. - View Dependent Claims (13, 14, 15, 16)
-
-
17. A light emitting device configured as a laser device, comprising:
-
a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes a semipolar III-nitride active layer, material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square, the semipolar III-nitride active layer emits the light with reduced blue-shift in a blue emission peak when increasing the drive current density between 33 Amps per centimeter square and 222 Amps per centimeter square, as compared to a polar III-nitride active layer operating in similar wavelength and drive current density ranges, and the drive current density is direct current density; and an edge configured on the light emitting device structure for emission of light. - View Dependent Claims (18, 19, 20)
-
Specification