Light emitting diode module for surface mount technology and method of manufacturing the same

• US 9,793,441 B2
• Filed: 09/20/2016
• Issued: 10/17/2017
• Est. Priority Date: 07/02/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A, Kim, Kyoung Wan, Kim, Chang Yeon
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US15/271,026
• Publication Number:
  US 20170012176A1
• Time in Patent Office: 392 Days
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05173 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/0518 Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/0568 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/06051 : Bonding areas having different shapes
• CPC Class Codes: H01L 2224/0616 : Random array, i.e. array with no symmetry
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32227 : the layer connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/3316 : Random layout, i.e. layout with no symmetry
• CPC Class Codes: H01L 2224/83399 : Material
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 24/00 : Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/053 : Oxides composed of metals from groups of the periodic table
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.

Claims

1. A light emitting diode (LED) module comprising:

a package substrate;

a first bonding pad and a second bonding pad formed over the package substrate to be separated from each other;

an LED unit electrically connected to the first and the second bonding pads; and

a phosphor layer covering the LED unit;

wherein the LED unit includes;

a first semiconductor layer,

a second semiconductor layer,

an active layer disposed between the first and second semiconductor layer;

a reflective layer formed over the second semiconductor layer;

an insulating layer formed over the reflective layer and having a first pattern of holes and a second pattern of holes, the first pattern of holes exposing selective portions of the reflective layer;

a first pad formed over the insulation layer to cover the first pattern and coupled to the first bonding pad, the first pad electrically connected to the second semiconductor layer; and

a second pad formed over the insulation layer to cover the second pattern and coupled to the second bonding pad.

2. The light emitting diode module of claim 1, further including a solder resist layer through which the first pad and the second pad are coupled to the first bonding pad and the second bonding pad, respectively.

3. The light emitting diode module of claim 1, further including a conductive reflection layer formed between the reflective layer and the insulating layer.

4. The light emitting diode module of claim 1, further including an additional insulating layer disposed between the reflective layer and the second pattern of the insulation layer.

5. The light emitting diode module of claim 1, wherein the phosphor layer includes a first phosphor layer and a second phosphor layer.

6. The light emitting diode module of claim 1, wherein the second pad is electrically connected to the first semiconductor layer.

7. The light emitting diode module of claim 1, wherein an area of the first pad is greater than an area of the second pad.

8. The light emitting diode module of claim 1, wherein the first pattern of holes is formed in a first pad region and the second pattern of holes is formed in a second pad region such that a number of holes in the first pad region is equal to or greater than a number of holes in the second pad region.

9. The light emitting diode module of claim 3, wherein the second pattern of holes exposes selective portions of the conductive reflection layer.

10. A light emitting diode (LED) module comprising:

a light emitting structure including a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a reflective layer;

a first insulation layer formed over the light emitting structure and patterned to expose at least a portion of the reflective layer;

a conductive reflection layer formed over the first insulation layer;

a second insulation layer formed over the conductive reflection layer and patterned to expose at least a portion of the conductive reflection layer;

a first pad formed to be electrically connected to the exposed portion of the reflective layer;

a second pad formed to be electrically connected to the exposed portion of the conductive reflection layer;

a first bonding pad electrically connected to the first pad; and

a second bonding pad electrically connected to the second pad.

11. The light emitting diode module of claim 10, wherein an area of the exposed reflective layer is greater than an area of the exposed conductive reflective layer.

12. The light emitting diode module of claim 10, further including a phosphor layer covering lateral sides of the light emitting structure.

13. The light emitting diode module of claim 10, wherein the patterned first insulation layer and the patterned second insulation layer include holes.

14. The light emitting diode module of claim 10, wherein the reflective layer exposed by the patterned first insulation layer and the conductive reflection layer exposed by the patterned second insulation layer are formed over different regions of the light emitting structure.

15. The light emitting diode module of claim 10, further including a solder resist layer through which the first pad and the second pad are coupled to the first bonding pad and the second bonding pad, respectively.

16. The light emitting diode module of claim 10, further including a package substrate coupled to the first bonding pad and the second bonding pad.

17. The light emitting diode module of claim 10, wherein the first insulating layer, the conductive insulation layer, and the second insulation layer are sequentially formed over at least a portion of a top surface of the light emitting structure has a side.

18. The light emitting diode module of claim 13, wherein the holes in the patterned first insulation layer and the holes in the second insulation layer are formed over different portions of the light emitting structure.