Composite having semiconductor structure including a nanocrystalline core and shell embedded in a matrix
First Claim
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1. A composite, comprising:
- a matrix material; and
a plurality of semiconductor structures embedded in the matrix material, each semiconductor structure comprising;
an anisotropic nanocrystalline core comprising a first semiconductor material;
a nanocrystalline shell comprising a second, different, semiconductor material completely surrounding the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction than in the second direction, and wherein the anisotropic nanocrystalline core and the nanocrystalline shell form a quantum dot; and
an insulator layer encapsulating the nanocrystalline shell and anisotropic nanocrystalline core.
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Abstract
Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.
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Citations
27 Claims
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1. A composite, comprising:
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a matrix material; and a plurality of semiconductor structures embedded in the matrix material, each semiconductor structure comprising; an anisotropic nanocrystalline core comprising a first semiconductor material; a nanocrystalline shell comprising a second, different, semiconductor material completely surrounding the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction than in the second direction, and wherein the anisotropic nanocrystalline core and the nanocrystalline shell form a quantum dot; and an insulator layer encapsulating the nanocrystalline shell and anisotropic nanocrystalline core. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of fabricating a composite, the method comprising:
forming a plurality of semiconductor structures, the forming of each semiconductor structure comprising; forming an anisotropic nanocrystalline core comprising a first semiconductor material; forming a nanocrystalline shell from a second, different, semiconductor material to completely surround the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction than in the second direction, and wherein the anisotropic nanocrystalline core and the nanocrystalline shell form a quantum dot; and forming an insulator layer encapsulating the nanocrystalline shell and anisotropic nanocrystalline core; and embedding the plurality of semiconductor structures in a matrix material. - View Dependent Claims (24, 25, 26, 27)
Specification