Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

• US 9,793,448 B2
• Filed: 08/12/2016
• Issued: 10/17/2017
• Est. Priority Date: 05/18/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Jung, Jung Hwa, Kim, Bang Hyun
• Primary Examiner(s): ENAD, CHRISTINE A
• Application Number:
  US15/236,125
• Publication Number:
  US 20160351759A1
• Time in Patent Office: 431 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

Claims

1. light-emitting diode (LED), comprising:

a substrate;

a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; and

a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer,

wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR, and

wherein the DBR comprises alternately stacked insulating layers with different refractive indices.

2. The LED of claim 1, further comprising:

a first electrode disposed on the semiconductor stacked structure and electrically connected to the first conductivity-type semiconductor layer; and

a second electrode disposed on the semiconductor stacked structure and electrically connected to the second conductivity-type semiconductor layer.

3. The LED of claim 2, further comprising:

a first insulating layer disposed on the semiconductor stacked structure; and

a second insulating layer disposed on the first insulating layer,

wherein the first insulating layer contacts a side surface of the second electrode and a side surface of the active layer.

4. The LED of claim 1, further comprising:

a first insulating layer disposed on the semiconductor stacked structure; and

a second insulating layer disposed on the first insulating layer.

5. The LED of claim 4, wherein at least a portion of a side surface of the second insulating layer contacts the wavelength converting layer.

6. The LED of claim 4, wherein a side surface of the second insulating layer is substantially flush with the side surface of the semiconductor stacked structure.

7. The LED of claim 4, further comprising a transparent conductive layer disposed between the first insulating layer and the semiconductor stacked structure.

8. A light-emitting diode (LED) module, comprising:

a mount; and

an LED disposed on the mount, the LED comprising;

a substrate;

a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; and

a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer,

wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR, and

wherein the DBR comprises alternately stacked insulating layers with different refractive indices.

9. The LED module claim 8, wherein the mount comprises at least one of a printed circuit board, a lead frame, and a ceramic substrate.

10. The LED module of claim 9, wherein the mount further comprises lead terminals,

wherein the lead terminals are electrically connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.

11. The LED module of claim 8, further comprising a transparent resin disposed on the semiconductor stacked structure,

wherein a portion of the wavelength converting layer is disposed between the semiconductor stacked structure and the transparent resin.

12. The LED module of claim 11, wherein the transparent resin is further disposed on the side surface of the semiconductor stacked structure,

wherein at least a portion of the wavelength converting layer is disposed between the semiconductor stacked structure and the transparent resin.

13. The LED module of claim 11, wherein the transparent resin comprises at least one of TiO₂, SiO₂, and Y₂O₃.

14. The LED module of claim 8, further comprising:

a first electrode disposed on the semiconductor stacked structure and electrically connected to the first conductivity-type semiconductor layer; and

a second electrode disposed on the semiconductor stacked structure and electrically connected to the second conductivity-type semiconductor layer.

15. The LED module of claim 14, wherein the first electrode comprises a lower electrode and an upper electrode disposed on the lower electrode.

16. The LED module of claim 15, further comprising:

a first insulating layer disposed on the semiconductor stacked structure; and

a second insulating layer disposed on the first insulating layer,

wherein at least a portion of the lower electrode passes through the first insulating layer and is electrically connected to the first conductivity-type semiconductor layer.

17. The LED module of claim 15, further comprising:

a first insulating layer disposed on the semiconductor stacked structure; and

a second insulating layer disposed on the first insulating layer,

wherein at least a portion of the second electrode passes through the second insulating layer and is electrically connected to the second conductivity-type semiconductor layer.

18. The LED module of claim 14, further comprising a transparent conductive layer disposed between the second conductivity-type semiconductor layer and the second electrode.

19. The LED module of claim 8, further comprising:

a first insulating layer disposed on the semiconductor stacked structure; and

a second insulating layer disposed on the first insulating layer.