Light-emitting device and method of manufacturing thereof

• US 9,793,458 B2
• Filed: 02/21/2017
• Issued: 10/17/2017
• Est. Priority Date: 07/05/2013
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Huang, Chien-Fu, Chan, Yao-Ning, Hsu, Tzu Chieh, Chen, Yi Ming, Chiu, Hsin-Chih, Lu, Chih-Chiang, Hsu, Chia-Liang, Chang, Chun-Hsien
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US15/438,430
• Publication Number:
  US 20170170375A1
• Time in Patent Office: 238 Days
• Field of Search: None
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

Claims

1. A method of manufacturing a light-emitting device, which comprises:

providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; and

conducting a first separating step comprises;

providing a second substrate;

conducting a first bonding step to bond the first semiconductor stacked block to the second substrate;

separating the first semiconductor stacked block from the first substrate and keeping a second semiconductor stacked block on the first substrate; and

conducting a second bonding step to bond and align the first semiconductor stacked block with the second semiconductor stacked block.

2. The method of manufacturing a light-emitting device of claim 1, further comprises separating the first semiconductor stacked block from the second substrate.

3. The method of manufacturing a light-emitting device of claim 2, further comprises:

providing a third substrate;

conducting a third bonding step to bond and align the first semiconductor stacked block with the third substrate; and

separating the second semiconductor stacked block from the first substrate.

4. The method of manufacturing a light-emitting device of claim 3, wherein the third substrate further comprises a first electrode before conducting the third bonding step, and the first semiconductor stacked block aligns with the first electrode and forms electrical connection with the first electrode in the third bonding step.

5. The method of manufacturing a light-emitting device of claim 4, further comprises forming a second electrode on the third substrate, and the second electrode electrically connect to the second semiconductor stacked block.

6. The method of manufacturing a light-emitting device of claim 4, wherein the third substrate comprises a via, and the first electrode is formed by filling a conductive material in the via.

7. The method of manufacturing a light-emitting device of claim 4, wherein the first electrode comprise a first end connecting to the first semiconductor stacked block and a second end opposite to the first end, and the first end has an area different from that of the second end from a cross section of the light emitting device.

8. The method of manufacturing a light-emitting device of claim 5, further comprises forming an insulating layer on a sidewall of the semiconductor stacked blocks, and the second electrode covers the insulating layer.

9. The method of manufacturing a light-emitting device of claim 1, further comprises forming a first sacrificial layer on the first semiconductor stacked block before the first bonding step.

10. The method of manufacturing a light-emitting device of claim 9, wherein the first sacrificial layer is formed by forming a layer of a material of the first sacrificial layer on the surfaces of the plurality of the semiconductor stacked blocks, and then selectively removing the material of the first sacrificial layer.

11. The method of manufacturing a light-emitting device of claim 9, wherein the first sacrificial layer comprises conductive material.

12. The method of manufacturing a light-emitting device of claim 9, wherein the first sacrificial layer comprises metal oxide.

13. The method of manufacturing a light-emitting device of claim 1, further comprises separating the second semiconductor stacked block from the first substrate.

14. The method of manufacturing a light-emitting device of claim 13, further comprises forming a second electrode on the second substrate after the second bonding step.

15. The method of manufacturing a light-emitting device of claim 1, wherein the second substrate comprises a first electrode.

16. The method of manufacturing a light-emitting device of claim 15, wherein the first bonding step comprises aligning and bonding the first semiconductor stacked block with the first electrode of the second substrate in order to form electrical connection between the first electrode and the first semiconductor stacked block.

17. The method of manufacturing a light-emitting device of claim 15, wherein the second substrate comprises a via, and the first electrode is formed by filling a conductive material in the via.

18. The method of manufacturing a light-emitting device of claim 1, further comprises forming a conductive oxide layer on the first semiconductor stacked block and/ or the second semiconductor stacked block before the second bonding step.

19. The method of manufacturing a light-emitting device of claim 1, further comprises forming a metal layer on at least one of the first semiconductor stacked block and/ or the second semiconductor stacked block before the second bonding step.

20. The method of manufacturing a light-emitting device of claim 1, further comprising forming a second electrode on the second semiconductor stacked block after the second bonding step.