Compression and cold weld sealing method for an electrical via connection

• US 9,796,583 B2
• Filed: 06/04/2012
• Issued: 10/24/2017
• Est. Priority Date: 11/04/2004
• Status: Active Grant

• Current Assignee: DARE MB Incorporated
• Original Assignee: Microchips Biotech, Inc. (Keratin Biosciences, Inc.)
• Inventors: Coppeta, Jonathan R., Shelton, Kurt, Sheppard, Jr., Norman F., Snell, Douglas, Santini, Catherine M. B.
• Primary Examiner(s): Walker, Keith
• Assistant Examiner(s): GAMINO, CARLOS J
• Application Number:
  US13/488,355
• Publication Number:
  US 20120241216A1
• Time in Patent Office: 1,968 Days
• Field of Search: 228115, 228116
• CPC Class Codes: A61K 9/0097 Micromachined devices; Microelectromechanical systems [MEMS]; Devices obtained by lithographic treatment of silicon; Devices comprising chips intradermal microneedle arrays A61K9/0021; MEMS in general B81B7/02
• CPC Class Codes: A61M 2205/0244 Micromachined materials, e.g. made from silicon wafers, microelectromechanical systems [MEMS] or comprising nanotechnology
• CPC Class Codes: A61M 2207/00 Methods of manufacture, assembly or production
• CPC Class Codes: A61M 5/14276 specially adapted for implantation
• CPC Class Codes: B23K 20/02 by means of a press ; Diffusion bonding B23K20/001, B23K20/04 take precedence
• CPC Class Codes: B33Y 80/00 Products made by additive manufacturing
• CPC Class Codes: B81B 2201/06 Bio-MEMS
• CPC Class Codes: B81C 1/00047 Cavities
• CPC Class Codes: B81C 1/00095 Interconnects
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: B81C 2203/038 Bonding techniques not provided for in B81C2203/031 - B81C2203/037
• CPC Class Codes: F16B 11/004 by cold pressure welding
• CPC Class Codes: F16B 4/004 Press fits, force fits, interference fits, i.e. fits without heat or chemical treatment F16B4/002 takes precedence
• CPC Class Codes: F16B 5/08 by means of welds or the like welding B23K
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/051 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/056 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16237 : the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 23/10 : characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/3142 : Sealing arrangements between parts, e.g. adhesion promotors
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/16315 : Shape
• CPC Class Codes: Y10T 403/477 : Fusion bond, e.g., weld, etc.

Abstract

Compression cold welding methods, joint structures, and hermetically sealed containment devices are provided. The method includes providing a first substrate having at least one first joint structure which comprises a first joining surface, which surface comprises a first metal; providing a second substrate having at least one second joint structure which comprises a second joining surface, which surface comprises a second metal; and compressing together the at least one first joint structure and the at least one second joint structure to locally deform and shear the joining surfaces at one or more interfaces in an amount effective to form a metal-to-metal bond between the first metal and second metal of the joining surfaces. Overlaps at the joining surfaces are effective to displace surface contaminants and facilitate intimate contact between the joining surfaces without heat input. Hermetically sealed devices can contain drug formulations, biosensors, or MEMS devices.

Claims

1. A method of forming an electrical via connection comprising:

providing a first non-conductive substrate having an aperture therethrough, wherein the interior surface of said first substrate defining said aperture comprises a layer of a first electrically conductive material;

providing a second non-conductive substrate having a projecting member extending from a surface of said second substrate, wherein said projecting member is formed of or coated with a layer of a second electrically conductive material; and

compressing the projecting member of said second substrate into the aperture of said first substrate, to locally plastically deform and shear the first and second electrically conductive materials, in an amount effective to form a cold weld and electrical connection between the first and second electrically conductive materials.

2. The method of claim 1, further comprising:

before the step of compressing, aligning the projecting member of said second substrate relative to the aperture of said first substrate so as to impart one or more overlaps of the projecting member relative to the aperture.

3. The method of claim 2, wherein the step of compressing comprises locally deforming and shearing the projecting member at one or more interfaces created by the one or more overlaps in an amount effective to plastically deform at least a portion of the projecting member into a space between the first substrate and the second substrate outside the aperture.

4. The method of claim 1, wherein the first non-conductive substrate, the second non-conductive substrate, or both first and second non-conductive substrates comprise silicon.

5. The method of claim 4, wherein the first electrically conductive material, the second electrically conductive material, or both electrically conductive materials comprise gold, indium, aluminum, copper, lead, zinc, nickel, silver, palladium, cadmium, titanium, tungsten, tin, and combinations thereof.

6. The method of claim 2, wherein the one or more overlaps have a width of between 1 μ

m and 50 μ

m.

7. The method of claim 1, wherein the projecting member is cylindrical.

8. The method of claim 1, wherein the first non-conductive substrate is rigid.

9. The method of claim 8, wherein the first non-conductive substrate comprises silicon.

11. The method of claim 1, wherein the first and second electrically conductive materials are gold.

10. A method of forming an electrical via connection comprising:

providing a first non-conductive substrate having an aperture therethrough, wherein the interior surface of said first substrate defining said aperture comprises a layer of a first electrically conductive material;

providing a second non-conductive substrate having a projecting member extending from a surface of said second substrate, wherein said projecting member is formed of or coated with a layer of a second electrically conductive material; and

compressing the projecting member of said second substrate into the aperture of said first substrate, to locally plastically deform and shear the first and second electrically conductive materials, in an amount effective to form a hermetic cold weld and electrical connection between the first and second electrically conductive materials.

12. The method of claim 10, wherein the first and second electrically conductive materials are gold.