Methods of etching films comprising transition metals
First Claim
1. A method of etching a substrate, the method comprising:
- activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to a halide transfer agent to provide an activated substrate surface; and
exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent;
wherein the Lewis base or pi acid comprises a chelating amine having the structure;
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Abstract
Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.
12 Citations
19 Claims
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1. A method of etching a substrate, the method comprising:
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activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent; wherein the Lewis base or pi acid comprises a chelating amine having the structure; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of etching a substrate, the method comprising:
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activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, or an oxidizing environment to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent wherein the Lewis base or pi acid comprises a chelating amine having the structure; - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification