Compliant bipolar micro device transfer head with silicon electrodes
First Claim
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1. A bipolar transfer head array comprising:
- a base substrate; and
an array of electrostatic transfer heads, each electrostatic transfer head including;
a pair of electrodes that is deflectable toward a cavity between the base substrate and the pair of electrodes,wherein the pair of electrodes includes a first electrode extending from a first side of the cavity, and a second electrode extending from a second side of the cavity opposite the first side; and
a dielectric joint between a first mesa structure of the first electrode and a second mesa structure of the second electrode.
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Abstract
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.
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Citations
15 Claims
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1. A bipolar transfer head array comprising:
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a base substrate; and an array of electrostatic transfer heads, each electrostatic transfer head including; a pair of electrodes that is deflectable toward a cavity between the base substrate and the pair of electrodes, wherein the pair of electrodes includes a first electrode extending from a first side of the cavity, and a second electrode extending from a second side of the cavity opposite the first side; and a dielectric joint between a first mesa structure of the first electrode and a second mesa structure of the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification