Compliant bipolar micro device transfer head with silicon electrodes

• US 9,799,547 B2
• Filed: 06/07/2017
• Issued: 10/24/2017
• Est. Priority Date: 07/06/2012
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Golda, Dariusz, Bibl, Andreas
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US15/616,676
• Publication Number:
  US 20170271192A1
• Time in Patent Office: 139 Days
• Field of Search: 257619, 257623, 257774, 257E29324, 257288, 438130, 438128, 438158, 438250, 438251, 438253, 438254, 438261, 438263, 438276, 438 30, 438 39, 438396
• CPC Class Codes: B32B 38/18 Handling of layers or the laminate
• CPC Class Codes: B81C 99/002 Apparatus for assembling MEMS, e.g. micromanipulators micromanipulators per se B25J7/00
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 21/3083 characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H02N 13/00 : Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• CPC Class Codes: Y10T 156/17 : Surface bonding means and/or assemblymeans with work feeding or handling means

Abstract

A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Claims

1. A bipolar transfer head array comprising:

a base substrate; and

an array of electrostatic transfer heads, each electrostatic transfer head including;

a pair of electrodes that is deflectable toward a cavity between the base substrate and the pair of electrodes,

wherein the pair of electrodes includes a first electrode extending from a first side of the cavity, and a second electrode extending from a second side of the cavity opposite the first side; and

a dielectric joint between a first mesa structure of the first electrode and a second mesa structure of the second electrode.

2. The bipolar transfer head array of claim 1, wherein each electrostatic transfer head is deflectable into the same cavity.

3. The bipolar transfer head array of claim 1, wherein each electrostatic transfer head is deflectable into a separate cavity.

4. The bipolar transfer head array of claim 1, wherein the pair of electrodes comprises a corresponding pair of mesa structures.

5. The bipolar transfer head array of claim 4, wherein dielectric joint is between the pair of mesa structures.

6. The bipolar transfer head array of claim 5, further comprising a dielectric layer covering a top surface of each pair of mesa structures.

7. The bipolar transfer head array of claim 6, wherein the dielectric layer and the dielectric joint are formed of a same material.

8. The bipolar transfer head array of claim 7, wherein the dielectric layer and the dielectric joint are a continuous layer.

9. The bipolar transfer head array of claim 8, wherein each electrostatic transfer head is deflectable into the same cavity.

10. The bipolar transfer head array of claim 8, wherein each electrostatic transfer head is deflectable into a separate cavity.

11. The bipolar transfer head array of claim 6, wherein the dielectric layer and the dielectric joint are separate layers.

12. The bipolar transfer head array of claim 11, wherein the dielectric layer and the dielectric joint are formed of different materials.

13. The bipolar transfer head array of claim 11, wherein the dielectric layer and the dielectric joint are formed of a same material.

14. The bipolar transfer head array of claim 11, wherein each electrostatic transfer head is deflectable into the same cavity.

15. The bipolar transfer head array of claim 11, wherein each electrostatic transfer head is deflectable into a separate cavity.