Method for forming group III/V conformal layers on silicon substrates
First Claim
1. A method of forming a layer, comprising:
- positioning a substrate in a processing chamber, the substrate comprising an exposed surface;
delivering a nucleation gas comprising a first group III precursor to the exposed surface of the substrate while depositing a nucleation layer on the exposed surface, the nucleation gas being free of a group V precursor;
delivering a second group III precursor and a group V precursor to the nucleation layer while depositing a group III/V layer on the nucleation layer; and
continuing to flow the group V precursor while stopping the flow of the second group III precursor.
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Abstract
A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.
27 Citations
20 Claims
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1. A method of forming a layer, comprising:
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positioning a substrate in a processing chamber, the substrate comprising an exposed surface; delivering a nucleation gas comprising a first group III precursor to the exposed surface of the substrate while depositing a nucleation layer on the exposed surface, the nucleation gas being free of a group V precursor; delivering a second group III precursor and a group V precursor to the nucleation layer while depositing a group III/V layer on the nucleation layer; and continuing to flow the group V precursor while stopping the flow of the second group III precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a layer, comprising:
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cleaning an exposed surface of a substrate; depositing a group III nucleation layer over the exposed surface at a first temperature, the group III nucleation layer being free of a group V element; depositing a binary or ternary group III/V layer on the group III nucleation layer at a second temperature; and annealing the binary or ternary group III/V layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A device, comprising:
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a silicon substrate comprising; a first surface; and a second surface disposed opposite the first surface; a group III nucleation layer disposed on the first surface of the silicon substrate, wherein the group III nucleation layer being free of a group V element; and a group III/V buffer layer on top of the group III nucleation layer, wherein the combined nucleation layer and the group III/V buffer layer are from 50 Å
to 300 Å
thick. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification