Semiconductor device with field electrode and contact structure
First Claim
1. A semiconductor device, comprising:
- a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode;
a semiconductor body including a transistor section surrounding the field electrode structure in a horizontal plane parallel with and below a first surface of the semiconductor body, the semiconductor body comprising a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the first drift zone section;
a gate structure surrounding the field electrode structure in the same horizontal plane as the transistor section and comprising a gate electrode and a gate dielectric separating the gate electrode and the body zone; and
a contact structure adjoining the source and body zones and surrounding the field electrode structure in the same horizontal plane as the transistor section and the gate structure.
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Accused Products
Abstract
A semiconductor device includes a field electrode structure with a field electrode and a field dielectric surrounding the field electrode. A semiconductor body includes a transistor section surrounding the field electrode structure and including a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. The body zone forms a first pn junction with the source zone and a second pn junction with the first drift zone section. A gate structure surrounds the field electrode structure and includes a gate electrode and a gate dielectric separating the gate electrode and the body zone. A contact structure directly adjoins the source and body zones and surrounds the field electrode structure equably with respect to the field electrode structure.
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Citations
16 Claims
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1. A semiconductor device, comprising:
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a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode; a semiconductor body including a transistor section surrounding the field electrode structure in a horizontal plane parallel with and below a first surface of the semiconductor body, the semiconductor body comprising a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the first drift zone section; a gate structure surrounding the field electrode structure in the same horizontal plane as the transistor section and comprising a gate electrode and a gate dielectric separating the gate electrode and the body zone; and a contact structure adjoining the source and body zones and surrounding the field electrode structure in the same horizontal plane as the transistor section and the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification