Method for producing an optoelectronic semiconductor chip
First Claim
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1. A method for producing an optoelectronic semiconductor chip having the following steps in the stated order:
- providing a substrate;
depositing a buffer layer;
depositing a sacrificial layer;
depositing a functional semiconductor layer sequence, wherein the functional semiconductor layer sequence forms a light-emitting diode structure;
laterally patterning the functional semiconductor layer sequence so that a grid-like system of trenches is formed, the trenches extend through the semiconductor layer sequence in the opposite direction to a growth direction from a top of the functional semiconductor layer sequence remote from the substrate, the trenches split the functional semiconductor layer sequence and the sacrificial layer and end in the buffer layer, which acts as an etch stop layer, while not patterning the substrate;
oxidizing the sacrificial layer in a wet thermal oxidation process; and
separating the functional semiconductor layer sequence from the substrate, wherein the substrate remains as a contiguous uninterrupted layer.
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Abstract
A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.
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Citations
17 Claims
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1. A method for producing an optoelectronic semiconductor chip having the following steps in the stated order:
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providing a substrate; depositing a buffer layer; depositing a sacrificial layer; depositing a functional semiconductor layer sequence, wherein the functional semiconductor layer sequence forms a light-emitting diode structure; laterally patterning the functional semiconductor layer sequence so that a grid-like system of trenches is formed, the trenches extend through the semiconductor layer sequence in the opposite direction to a growth direction from a top of the functional semiconductor layer sequence remote from the substrate, the trenches split the functional semiconductor layer sequence and the sacrificial layer and end in the buffer layer, which acts as an etch stop layer, while not patterning the substrate; oxidizing the sacrificial layer in a wet thermal oxidation process; and separating the functional semiconductor layer sequence from the substrate, wherein the substrate remains as a contiguous uninterrupted layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for producing an optoelectronic semiconductor chip having the following steps:
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providing a single substrate; depositing a buffer layer; depositing a sacrificial layer; depositing a functional semiconductor layer sequence; laterally patterning the functional semiconductor layer sequence so that a grid-like system of trenches is formed, the trenches extend through the semiconductor layer sequence in the opposite direction to a growth direction from a top of the functional semiconductor layer sequence remote from the substrate, the trenches split the functional semiconductor layer sequence and the sacrificial layer and end in the buffer layer, which acts as an etch stop layer, while not patterning the substrate; providing a carrier on the functional semiconductor layer sequence on a side remote from the substrate; and oxidizing the sacrificial layer in a wet thermal oxidation process, wherein the substrate comprises GaAs, wherein the sacrificial layer comprises AlxGa1-xAs, wherein 0.8 <
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1wherein porous AlOxHy is formed during oxidation of the sacrificial layer, and wherein during detachment of the functional semiconductor layer sequence from the single substrate, a shear force is exerted on the functional semiconductor layer sequence. - View Dependent Claims (16)
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17. A method for producing an optoelectronic semiconductor chip having the following steps:
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providing a GaAs substrate; depositing a sacrificial layer comprising AlxGa1-xAs, wherein 0.8 <
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1;depositing a functional semiconductor layer sequence which is a light-emitting diode structure; laterally patterning the functional semiconductor layer sequence; oxidizing the sacrificial layer in a wet thermal oxidation process so that porous AlOxHy is formed during oxidation of the sacrificial layer so that an oxidized sacrificial layer is yielded, the oxidized sacrificial layer is subsequently removed by means of an etching solution; and separating the functional semiconductor layer sequence from the substrate, wherein the substrate is reused.
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Specification