Through silicon via including multi-material fill
First Claim
1. An apparatus comprising:
- a substrate including at least one via disposed in the substrate, the substrate including;
a trench having sidewalls defining a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein a top of the trench opens to a top opening, and a bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening; and
a mouth surrounding the top opening of the trench and in fluid communication with the top opening of the trench, the mouth including sidewalls that extend from the upper surface of the substrate to the top opening of the trench, whereina mouth opening in the upper surface of the substrate is larger than the top opening of the trench, if each sidewall of the trench was extended to the upper surface of the substrate,the sidewalls of the mouth are non-vertical, andwherein the at least one via includes;
a dielectric layer disposed on an inside surface of a trench; and
a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
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Accused Products
Abstract
An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
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Citations
26 Claims
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1. An apparatus comprising:
a substrate including at least one via disposed in the substrate, the substrate including; a trench having sidewalls defining a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein a top of the trench opens to a top opening, and a bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening; and a mouth surrounding the top opening of the trench and in fluid communication with the top opening of the trench, the mouth including sidewalls that extend from the upper surface of the substrate to the top opening of the trench, wherein a mouth opening in the upper surface of the substrate is larger than the top opening of the trench, if each sidewall of the trench was extended to the upper surface of the substrate, the sidewalls of the mouth are non-vertical, and wherein the at least one via includes; a dielectric layer disposed on an inside surface of a trench; and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An apparatus comprising:
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a substrate including at least one via disposed in the substrate, the substrate including; a trench having sidewalls defining a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein a top of the trench opens to a top opening, and a bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening; and a mouth surrounding the top opening of the trench and in fluid communication with the top opening of the trench, the mouth includes sidewalls that extend from the upper surface of the substrate to the top opening of the trench, wherein; a mouth opening in the upper surface of the substrate is larger than the top opening of the trench, if each sidewall of the trench was extended to the upper surface of the substrate, the sidewalls of the mouth are non-vertical, and a second substrate bonded to the substrate; and wherein the at least one via includes; a dielectric layer disposed on an inside surface of a trench; and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. An apparatus comprising:
a substrate including at least one via disposed in the substrate, the substrate including; a trench having sidewalls defining a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein a top of the trench opens to a top opening, and a bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening; and a mouth surrounding the top opening of the trench and in fluid communication with the top opening of the trench, the mouth including sidewalls that extend from the upper surface of the substrate to the top opening of the trench, wherein a mouth opening in the upper surface of the substrate is larger than the top opening of the trench, if each sidewall of the trench was extended to the upper surface of the substrate, the sidewalls of the mouth are curved, and the at least one via includes; a dielectric layer disposed on an inside surface of a trench; and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
Specification