Semiconductor device

• US 9,806,200 B2
• Filed: 03/22/2016
• Issued: 10/31/2017
• Est. Priority Date: 03/27/2015
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Shimomura, Akihisa, Tanaka, Tetsuhiro, Kimura, Masayuki, Tokumaru, Ryo, Matsubayashi, Daisuke, Yamane, Yasumasa
• Primary Examiner(s): Santiago, Mariceli
• Application Number:
  US15/077,029
• Publication Number:
  US 20160284856A1
• Time in Patent Office: 588 Days
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a first insulator, a second insulator, a semiconductor, and a conductor. The semiconductor is over the first insulator. The second insulator is over the semiconductor. The conductor is over the second insulator. The semiconductor includes a first region, a second region, and a third region. The first region is a region where the semiconductor overlaps with the conductor. Each of the second region and the third region is a region where the semiconductor does not overlap with the conductor. The second region and the third region each have a region with a spinel crystal structure.

Claims

1. A semiconductor device comprising:

a first insulator;

a semiconductor over the first insulator;

a second insulator over the semiconductor;

a third insulator over the second insulator;

a first conductor over the third insulator; and

a fourth insulator over the first conductor,

wherein the semiconductor comprises;

a first region overlapping with the first conductor; and

a second region and a third region each not overlapped with the first conductor between which the first region is positioned, and

wherein each of the second region and the third region comprises a region with a spinel crystal structure.

2. The semiconductor device according to claim 1, comprising a second conductor under the first insulator and overlapping with the first conductor with the first insulator, the semiconductor, and the second insulator interposed therebetween.

3. The semiconductor device according to claim 1, wherein a stack of the first insulator, the semiconductor, and the second insulator comprises the first region, the second region, and the third region.

4. The semiconductor device according to claim 1, wherein a stack of the first insulator and the semiconductor comprises the first region, the second region, and the third region.

5. The semiconductor device according to claim 1, wherein the semiconductor comprises indium, gallium, zinc, and oxygen.

6. The semiconductor device according to claim 1, wherein each of the first insulator and the second insulator comprises indium, gallium, zinc, and oxygen.

7. The semiconductor device according to claim 1, wherein the second insulator is in contact with a side surface of the semiconductor and a side surface of the first insulator.

8. The semiconductor device according to claim 1, wherein the fourth insulator is in contact with the third insulator.

9. The semiconductor device according to claim 1, wherein the fourth insulator is in contact with the second insulator.

10. The semiconductor device according to claim 1, wherein the fourth insulator is in contact with the semiconductor.

11. A display device comprising:

the semiconductor device according to claim 1; and

a display element electrically connected to the semiconductor device.

12. The display device according to claim 11, wherein the display element is a liquid crystal element.

13. The display device according to claim 11, wherein the display element is a light-emitting element.

14. A semiconductor device comprising:

a first insulator;

a semiconductor over the first insulator;

a second insulator over the semiconductor;

a third insulator over the second insulator;

a first conductor over the third insulator;

a fourth insulator in contact with a side surface of the first conductor; and

a fifth insulator over the first conductor and the fourth insulator;

wherein the semiconductor comprises;

a first region overlapping with the first conductor; and

a second region and a third region each not overlapped with the first conductor between which the first region is positioned, and

wherein each of the second region and the third region comprises a region with a spinel crystal structure.

15. The semiconductor device according to claim 14, comprising a second conductor under the first insulator and overlapping with the first conductor with the first insulator, the semiconductor, and the second insulator interposed therebetween.

16. The semiconductor device according to claim 14, wherein a stack of the first insulator, the semiconductor, and the second insulator comprises the first region, the second region, and the third region.

17. The semiconductor device according to claim 14, wherein a stack of the first insulator and the semiconductor comprises the first region, the second region, and the third region.

18. The semiconductor device according to claim 14, wherein the semiconductor comprises indium, gallium, zinc, and oxygen.

19. The semiconductor device according to claim 14, wherein each of the first insulator and the second insulator comprises indium, gallium, zinc, and oxygen.

20. The semiconductor device according to claim 14, wherein the second insulator is in contact with a side surface of the semiconductor and a side surface of the first insulator.

21. The semiconductor device according to claim 14, wherein the fourth insulator is in contact with the third insulator.

22. The semiconductor device according to claim 14, wherein the fourth insulator is in contact with the second insulator.

23. The semiconductor device according to claim 14, wherein the fourth insulator is in contact with the semiconductor.

24. The semiconductor device according to claim 14, wherein the fifth insulator is in contact with the third insulator.

25. The semiconductor device according to claim 14, wherein the fifth insulator is in contact with the second insulator.

26. The semiconductor device according to claim 14, wherein the fifth insulator is in contact with the semiconductor.

27. A display device comprising:

the semiconductor device according to claim 14; and

a display element electrically connected to the semiconductor device.

28. The display device according to claim 27, wherein the display element is a liquid crystal element.

29. The display device according to claim 27, wherein the display element is a light-emitting element.