Plasma processing apparatus
First Claim
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1. A plasma processing apparatus comprising:
- a processing chamber configured to accommodate a substrate;
a mounting table provided in the processing chamber and configured to mount thereon the substrate;
an applied antenna provided outside the processing chamber opposite to the mounting table and configured to supply a high frequency power or a microwave into the processing chamber for a generation of plasma in the processing chamber;
a window member made of an electrical conductor, which forms a part of a wall of the processing chamber and is disposed between the mounting table and the applied antenna; and
a cover plate covering a bottom surface of the window member which faces an inside of the processing chamber,wherein the window member includes transmission units, and each transmission unit includes a slit extending into the window member in a thickness direction thereof and a width adjustment mechanism configured to adjust a width of the slit,wherein the width adjustment mechanism includes a through hole extending through the window member in the thickness direction thereof and an insertion member made of an electrical conductor and inserted into the through hole,wherein the insertion member is a cylindrical member and is in contact with the cover plate,wherein each transmission unit is configured to transmit the high frequency power or the microwave in the thickness direction of the window member through the slit, andwherein the slit is formed as a gap between the through hole and the insertion member and the width of the slit is configured to be adjusted by changing the size of the insertion member, so that an amount of the high frequency power or the microwave transmitted through the slit is adjusted and a uniformity of the plasma is adjusted thereby.
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Accused Products
Abstract
A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable.
7 Citations
13 Claims
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1. A plasma processing apparatus comprising:
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a processing chamber configured to accommodate a substrate; a mounting table provided in the processing chamber and configured to mount thereon the substrate; an applied antenna provided outside the processing chamber opposite to the mounting table and configured to supply a high frequency power or a microwave into the processing chamber for a generation of plasma in the processing chamber; a window member made of an electrical conductor, which forms a part of a wall of the processing chamber and is disposed between the mounting table and the applied antenna; and a cover plate covering a bottom surface of the window member which faces an inside of the processing chamber, wherein the window member includes transmission units, and each transmission unit includes a slit extending into the window member in a thickness direction thereof and a width adjustment mechanism configured to adjust a width of the slit, wherein the width adjustment mechanism includes a through hole extending through the window member in the thickness direction thereof and an insertion member made of an electrical conductor and inserted into the through hole, wherein the insertion member is a cylindrical member and is in contact with the cover plate, wherein each transmission unit is configured to transmit the high frequency power or the microwave in the thickness direction of the window member through the slit, and wherein the slit is formed as a gap between the through hole and the insertion member and the width of the slit is configured to be adjusted by changing the size of the insertion member, so that an amount of the high frequency power or the microwave transmitted through the slit is adjusted and a uniformity of the plasma is adjusted thereby. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification