Semiconductor device comprising an oxide semiconductor
First Claim
1. A semiconductor device comprising:
- an oxide insulating film;
an oxide semiconductor layer over the oxide insulating film;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer,a gate insulating film over the oxide semiconductor layer, the source electrode layer and the drain electrode layer;
a first gate electrode layer over the gate insulating film, the first gate electrode layer overlapping with the oxide semiconductor layer; and
a second gate electrode layer over and in contact with the first gate electrode layer,wherein distance between the source electrode layer and the drain electrode layer is shorter than or equal to 30 nm,wherein the first gate electrode layer comprises a conductive nitride, andwherein the second gate electrode layer comprises tungsten.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.
177 Citations
17 Claims
-
1. A semiconductor device comprising:
-
an oxide insulating film; an oxide semiconductor layer over the oxide insulating film; a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a gate insulating film over the oxide semiconductor layer, the source electrode layer and the drain electrode layer; a first gate electrode layer over the gate insulating film, the first gate electrode layer overlapping with the oxide semiconductor layer; and a second gate electrode layer over and in contact with the first gate electrode layer, wherein distance between the source electrode layer and the drain electrode layer is shorter than or equal to 30 nm, wherein the first gate electrode layer comprises a conductive nitride, and wherein the second gate electrode layer comprises tungsten. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device comprising:
-
an oxide insulating film; an oxide semiconductor layer over the oxide insulating film; a first source electrode layer over the oxide semiconductor layer; a first drain electrode layer over the oxide semiconductor layer; a second source electrode layer over and in contact with the first source electrode layer; a second drain electrode layer over and in contact with the first drain electrode layer; a gate insulating film over the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer; a first gate electrode layer over the gate insulating film, the first gate electrode layer overlapping with the oxide semiconductor layer; a second gate electrode layer over and in contact with the first gate electrode layer; and a protective insulating film over the second gate electrode layer, wherein distance between the second source electrode layer and the second drain electrode layer is shorter than or equal to 30 nm, wherein the first source electrode layer is interposed between the oxide semiconductor layer and the second source electrode layer, wherein the first drain electrode layer is interposed between the oxide semiconductor layer and the second drain electrode layer, wherein the first gate electrode layer comprises a conductive nitride, and wherein the second gate electrode layer comprises tungsten. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
-
Specification