Memory device incorporating selector element with multiple thresholds
First Claim
1. A memory device comprising a memory cell coupled to two wiring lines at two ends thereof, said memory cell comprising:
- a memory element including a magnetic free layer and a magnetic reference layer with a tunnel junction layer interposed therebetween; and
a bi-directional two-terminal selector element coupled to said memory element in series, said bi-directional two-terminal selector element including two selector devices having different threshold voltages coupled in series.
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Accused Products
Abstract
The present invention is directed to a memory device including a memory cell coupled to two wiring lines at two ends thereof. The memory cell includes a memory element, which includes a magnetic free layer and a magnetic reference layer with a tunnel junction layer interposed therebetween, and a bi-directional two-terminal selector element having multiple threshold voltages coupled to the memory element in series. The magnetic free layer has a variable magnetization direction substantially perpendicular to a layer plane thereof and the magnetic reference layer has a fixed magnetization direction substantially perpendicular to a layer plane thereof. In an embodiment, the bi-directional two-terminal selector element includes two selector devices with each selector device including two electrodes with a switching layer interposed therebetween. In another embodiment, the bi-directional two-terminal selector element includes a selector device incorporating therein two switching layers.
15 Citations
15 Claims
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1. A memory device comprising a memory cell coupled to two wiring lines at two ends thereof, said memory cell comprising:
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a memory element including a magnetic free layer and a magnetic reference layer with a tunnel junction layer interposed therebetween; and a bi-directional two-terminal selector element coupled to said memory element in series, said bi-directional two-terminal selector element including two selector devices having different threshold voltages coupled in series. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory device comprising a memory cell coupled to two wiring lines at two ends thereof, said memory cell including:
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a memory element including a magnetic free layer and a magnetic reference layer with a tunnel junction layer interposed therebetween; and a bi-directional two-terminal selector element coupled to said memory element in series, said bi-directional two-terminal selector element including at least two switching layers having different threshold voltages and a plurality of electrodes separated by said at least two switching layers. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification