Sensor

• US 9,812,509 B2
• Filed: 05/17/2016
• Issued: 11/07/2017
• Est. Priority Date: 05/19/2015
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yonehara, Toshiya, Sugi, Keiji
• Primary Examiner(s): Shamsuzzaman, Mohammed
• Application Number:
  US15/156,953
• Publication Number:
  US 20160343775A1
• Time in Patent Office: 539 Days
• Field of Search: 257 40, 257440, 1 1, 250226, 250206, 250792
• CPC Class Codes: A61B 2562/0233 Special features of optical sensors or probes classified in A61B5/00
• CPC Class Codes: A61B 2562/12 Manufacturing methods specially adapted for producing sensors for in-vivo measurements
• CPC Class Codes: A61B 5/02427 Details of sensor
• CPC Class Codes: A61B 5/14552 Details of sensors specially adapted therefor
• CPC Class Codes: G01N 21/27 using photo-electric detection G01N21/31 takes precedence; circuits for computing concentration logarithmic circuits G06G7/24; photometric circuits in general G01J
• CPC Class Codes: G01N 2201/0628 Organic LED [OLED]
• CPC Class Codes: H10K 50/13 comprising stacked EL layers within one EL unit
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 65/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers organic image sensors integrated with organic light-emitting devices H10K39/34; OLED displays integrated with photosensors H10K59/13

Abstract

According to one embodiment, a sensor includes a light emitter and a light sensor. The light emitter includes a first electrode, a second electrode, and a first light emitting layer. The second electrode is light-transmissive. The first light emitting layer is provided between the first electrode and the second electrode. The light sensor includes a third electrode, a fourth electrode, a fifth electrode, a first photoelectric conversion layer, and a second photoelectric conversion layer. the fourth electrode is light-transmissive. The fifth electrode is provided between the third electrode and the fourth electrode. The fifth electrode is light-transmissive. The first photoelectric conversion layer is provided between the third electrode and the fifth electrode. The second photoelectric conversion layer is provided between the fourth electrode and the fifth electrode.

Claims

1. A sensor, comprising:

a light emitter including

a first electrode,

a second electrode, the second electrode being light-transmissive, and

a first light emitting layer provided between the first electrode and the second electrode; and

a light sensor including

a third electrode,

a fourth electrode, the fourth electrode being light-transmissive,

a fifth electrode provided between the third electrode and the fourth electrode, the fifth electrode being light-transmissive,

a first photoelectric conversion layer provided between the third electrode and the fifth electrode, and

a second photoelectric conversion layer provided between the fourth electrode and the fifth electrode, wherein

the first photoelectric conversion layer includes a third organic substance,

the second photoelectric conversion layer includes a fourth organic substance,

a wavelength of light absorbed by the third organic substance is different from a wavelength of light absorbed by the fourth organic substance, and

a difference between an absorption peak wavelength of the first photoelectric conversion layer and an absorption peak wavelength of the second photoelectric conversion layer is 50 nm or more.

2. The sensor according to claim 1, wherein the first light emitting layer includes a first organic substance.

3. The sensor according to claim 1, wherein

the light emitter further includes a second light emitting layer provided between the first light emitting layer and the second electrode,

the first light emitting layer includes a first organic substance,

the second light emitting layer includes a second organic substance, and

a peak wavelength of a first light radiated from the first organic substance is different from a peak wavelength of a second light radiated from the second organic substance.

4. The sensor according to claim 3, wherein a difference between the peak wavelength of the first light and the peak wavelength of the second light is 50 nm or more.

5. The sensor according to claim 3, wherein the light emitter further includes a sixth electrode provided between the first light emitting layer and the second light emitting layer, the sixth electrode being light-transmissive.

6. The sensor according to claim 1, wherein a reflectance of the first electrode is higher than a reflectance of the second electrode.

7. The sensor according to claim 1, wherein at least a portion of the light emitter and at least a portion of the light sensor overlap in a first direction, the first direction being from the second electrode toward the first electrode.

8. The sensor according to claim 7, wherein

the light emitter is provided on a first substrate, the first substrate being light-transmissive,

the light sensor is provided on a second substrate, the second substrate being light-transmissive, and

at least a portion of the first substrate and at least a portion of the second substrate are provided between the light emitter and the light sensor.

9. The sensor according to claim 7, wherein

the light emitter is provided on a first substrate,

the light sensor is provided on a second substrate, the second substrate being light-transmissive,

the light emitter is provided between at least a portion of the first substrate and at least a portion of the second substrate, and

at least a portion of the second substrate is provided between the light emitter and the light sensor.

10. The sensor according to claim 8, wherein at least a portion of the first substrate is provided between the first light emitting layer and the second light emitting layer.

11. The sensor according to claim 8, wherein at least a portion of the second substrate is provided between the first photoelectric conversion layer and the second photoelectric conversion layer.

12. The sensor according to claim 1, wherein at least a portion of the light emitter and at least a portion of the light sensor overlap in a second direction perpendicular to a first direction, the first direction being from the second electrode toward the first electrode.

13. The sensor according to claim 1, further comprising a processor receiving a signal and processing the signal, the signal being sensed by the light sensor.