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Semiconductor device and method for manufacturing the same

  • US 9,812,537 B2
  • Filed: 02/14/2014
  • Issued: 11/07/2017
  • Est. Priority Date: 02/19/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer of a first conductivity type formed with a gate trench;

    a gate electrode buried in the gate trench via a gate insulating film;

    a source region of a first conductivity type disposed in a manner exposed on a surface of the semiconductor layer, forming a part of a side face of the gate trench;

    a channel region of a second conductivity type disposed for the source region on a back surface side of the semiconductor layer in a manner contacting the source region, forming a part of the side face of the gate trench;

    a drain region of a first conductivity type disposed for the channel region on the back surface side of the semiconductor layer in a manner contacting the channel region, forming a bottom face of the gate trench;

    a second trench selectively formed in a source portion defined in a manner containing the source region in the surface of the semiconductor layer;

    a trench buried portion buried in the second trench;

    a channel contact region of a second conductivity type selectively disposed at a position higher than that of a bottom portion of the second trench in the source portion, electrically connected with the channel region;

    a surface metal layer disposed on the source portion, electrically connected to the source region and the channel contact region; and

    a second conductivity-type layer formed at the bottom portion and a side portion of the second trench in a manner continuing from the channel region and the channel contact region.

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