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Semiconductor device and manufacturing method thereof

  • US 9,812,544 B2
  • Filed: 11/09/2015
  • Issued: 11/07/2017
  • Est. Priority Date: 12/17/2010
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming an oxide semiconductor film over a substrate;

    forming a gate insulating film over the oxide semiconductor film; and

    forming a gate electrode including a tungsten oxide film by a sputtering method over the gate insulating film,wherein a work function of the gate electrode is higher than or equal to 4.9 eV and lower than or equal to 5.6 eV,wherein a thickness of the gate electrode is greater than or equal to 10 nm.

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