Field effect transistor and method for manufacturing the same
First Claim
1. A method for manufacturing an electronic device, comprising steps of:
- forming a first conductive film over a substrate;
forming a first insulating film over the first conductive film;
forming a first insulating layer and a first conductive layer;
forming a semiconductor layer over and in contact with the first insulating layer and a second insulating layer over the semiconductor layer;
after forming the second insulating layer, etching the semiconductor layer so that the semiconductor layer does not overlap with any side edge of the first conductive layer;
forming a third insulating layer over the second insulating layer;
providing an opening reaching the semiconductor layer in the second insulating layer and the third insulating layer; and
forming a second conductive layer covering the opening.
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Accused Products
Abstract
Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the wiring, and also functions as a gate insulating film; a semiconductor layer which is provided over the insulating film and includes an oxide semiconductor and the like; an oxide insulating layer which is provided over the semiconductor layer and whose thickness is 5 times or more as large as the sum of the thickness of the insulating film and the thickness of the semiconductor layer or 100 nm or more; and wirings which are connected to the semiconductor layer through openings provided in the oxide insulating layer.
126 Citations
19 Claims
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1. A method for manufacturing an electronic device, comprising steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a first insulating layer and a first conductive layer; forming a semiconductor layer over and in contact with the first insulating layer and a second insulating layer over the semiconductor layer; after forming the second insulating layer, etching the semiconductor layer so that the semiconductor layer does not overlap with any side edge of the first conductive layer; forming a third insulating layer over the second insulating layer; providing an opening reaching the semiconductor layer in the second insulating layer and the third insulating layer; and forming a second conductive layer covering the opening. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing an electronic device, comprising steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; forming a second insulating film over the semiconductor film; after forming the second insulating film, etching the second insulating film, the semiconductor film, the first insulating film, and the first conductive film to form a second insulating layer, a semiconductor layer, a first insulating layer, and a first conductive layer; forming a third insulating layer over the second insulating layer; providing an opening reaching the semiconductor layer in the second insulating layer and the third insulating layer; and forming a second conductive layer covering the opening, wherein the semiconductor layer is formed so that the semiconductor layer does not overlap with any side edge of the first insulating layer. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing an electronic device, comprising steps of:
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forming a first conductive layer over a substrate, a first insulating layer over the first conductive layer, a semiconductor layer over and in contact with the first insulating layer and a second insulating layer over the semiconductor layer; after forming the second insulating layer, etching the semiconductor layer so that the semiconductor layer does not overlap with any side edge of the first conductive layer; forming a third insulating layer over the second insulating layer; providing an opening reaching the semiconductor layer in the second insulating layer and the third insulating layer; and forming a second conductive layer covering the opening. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification