Deep trench active device with backside body contact
First Claim
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1. An integrated circuit, comprising:
- a gate including a plurality of gate fingers;
a body including a plurality of semiconductor pillars interlocking with the plurality of gate fingers;
at least one backside contact coupled to the body; and
a backside metallization coupled to the body through the at least one backside contact.
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Abstract
An integrated circuit may include a gate, having gate fingers. The integrated circuit may also include a body, having semiconductor pillars interlocking with the gate fingers of the gate. The integrated circuit may also include a backside contact(s) coupled to the body. The integrated circuit may further include a backside metallization. The backside metallization may be coupled to the body through the backside contact(s).
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Citations
25 Claims
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1. An integrated circuit, comprising:
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a gate including a plurality of gate fingers; a body including a plurality of semiconductor pillars interlocking with the plurality of gate fingers; at least one backside contact coupled to the body; and a backside metallization coupled to the body through the at least one backside contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of constructing an integrated circuit, comprising:
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etching a semiconductor layer within an isolation layer to form a body including a plurality of semiconductor pillars; depositing a dielectric material layer on a front-side surface of the isolation layer and on a surface of the plurality of semiconductor pillars; depositing a semiconductor material on the dielectric material layer and in a plurality of trenches separating the plurality of semiconductor pillars to form a gate including a plurality of gate fingers, the plurality of gate fingers interlocking with the plurality of semiconductor pillars; bonding a handle substrate to a front-side dielectric layer on the front-side surface of the isolation layer; and fabricating a backside metallization in a backside dielectric layer supporting a backside surface of the isolation layer, the backside metallization coupled to the body through at least one backside contact. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. An integrated circuit, comprising:
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a gate including a plurality of gate fingers; a body including a plurality of semiconductor pillars interlocking with the plurality of gate fingers; at least one backside contact coupled to the body; and means for tying the body through the at least one backside contact. - View Dependent Claims (22, 23)
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24. A radio frequency (RF) front end module, comprising:
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an integrated RF circuit, comprising a deep trench switch transistor including a gate including a plurality of gate fingers and a body including a plurality of semiconductor pillars interlocking with the plurality of gate fingers, at least one backside contact coupled to the body, and a backside metallization coupled to the body through the at least one backside contact; and an antenna coupled to an output of the switch transistor. - View Dependent Claims (25)
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Specification