Optical sensor and manufacturing method thereof
First Claim
1. A semiconductor device, comprising:
- a semiconductive substrate;
a dielectric layer over the semiconductive substrate;
a reflective structure in the dielectric layer;
a waveguide region configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion, and the waveguide portion comprising the dielectric layer and the reflective structure;
an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region; and
a light sensing region over the semiconductive substrate, and the waveguide region disposed above the light sensing region,wherein the reflective structure in the dielectric layer is not electrically connected to the light sensing region.
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Accused Products
Abstract
Some embodiments of the present disclosure provide an optical sensor. The optical sensor includes a semiconductive substrate. A light sensing region is on the semiconductive substrate. A waveguide region is configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion. The waveguide portion includes a first dielectric layer including a first refractive index. A second dielectric layer includes a second refractive index. The second refractive index is smaller than the first refractive index. A first interconnect portion is positioned in the waveguide portion, configured to transmit electrical signal from the light sensing region to an external circuit. The sample holding portion is over the light sensing region.
24 Citations
8 Claims
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1. A semiconductor device, comprising:
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a semiconductive substrate; a dielectric layer over the semiconductive substrate; a reflective structure in the dielectric layer; a waveguide region configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion, and the waveguide portion comprising the dielectric layer and the reflective structure; an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region; and a light sensing region over the semiconductive substrate, and the waveguide region disposed above the light sensing region, wherein the reflective structure in the dielectric layer is not electrically connected to the light sensing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification