Cyclic oxide spacer etch process

• US 9,818,621 B2
• Filed: 01/04/2017
• Issued: 11/14/2017
• Est. Priority Date: 02/22/2016
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tavernier, Aurelien, Zhou, Qingjun, Choi, Tom, Lin, Yungchen, Zhang, Ying, Joubert, Olivier
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US15/398,011
• Publication Number:
  US 20170243754A1
• Time in Patent Office: 314 Days
• Field of Search: None
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31155 by ion implantation
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment to implant ions into a spacer material, performing an etching process on an implanted region of the spacer material, and repeating the inert plasma treatment and the etching process to form a predominantly flat top spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as pressure, may be controlled to influence a desired spacer profile.

Claims

1. A method of patterning a substrate, comprising:

biasing a substrate in a processing chamber, the substrate having mandrel structures and silicon oxide spacer material formed thereon;

exposing the silicon oxide spacer material to an inert plasma to implant ions in one or more regions of the silicon oxide spacer material at a first pressure;

exposing the implanted regions of the silicon oxide spacer material to an etchant plasma to remove a portion of the silicon oxide spacer material in the processing chamber at a second pressure, wherein the second pressure is at least about three orders of magnitude greater than the first pressure;

repeating the exposing the silicon oxide spacer material to an inert plasma and the exposing the implanted regions of the silicon oxide spacer material to an etchant plasma until the mandrel structures are exposed;

removing the mandrel structures; and

repeating the exposing the silicon oxide spacer material to an inert plasma and the exposing the implanted regions of the silicon oxide spacer material to an etchant plasma until a uniform silicon oxide spacer material top surface profile is achieved.

2. The method of claim 1, wherein the exposing the silicon oxide spacer material to an inert plasma and the exposing the modified regions of the silicon oxide spacer material to an etchant plasma are performed in a single processing chamber.

3. The method of claim 1, wherein the exposing the silicon oxide spacer material to an inert plasma is performed in a first processing chamber and the exposing the modified regions of the silicon oxide spacer material to an etchant plasma is performed in a second processing chamber.

4. The method of claim 1, wherein the silicon oxide spacer material is silicon dioxide.

5. The method of claim 1, wherein a processing gas utilized to form the inert plasma is selected from the group consisting of H₂, N₂, O₂, noble gases, and combinations and mixtures thereof.

6. The method of claim 5, wherein a processing gas utilized to form the etchant plasma is selected from the group consisting of H₂, N₂, H₂O₂, NF₃, NH₃, Cl₂, F₂, and combinations and mixtures thereof.

7. The method of claim 1, wherein the biasing the substrate is performed at a power of between about 20 W and about 200 W.

8. The method of claim 1, wherein the exposing the spacer material to an inert plasma is performed at a pressure of between about 5 mTorr and about 300 mTorr.

9. The method of claim 1, wherein the etchant plasma exposure is unbiased and the etchant plasma is generated by a remote plasma source.

10. The method of claim 1, wherein the ions are implanted into the one or more regions of the silicon oxide spacer materials at an angle normal to a top surface of the spacer material.

11. A method of patterning a substrate, comprising:

biasing the substrate in a processing chamber, the substrate having one or more silicon mandrel structures and a silicon oxide spacer material formed thereon;

exposing the silicon oxide spacer material to a hydrogen plasma to implant hydrogen ions in one or more regions of the silicon oxide spacer material;

exposing the implanted regions of the silicon oxide spacer material to a fluorine etchant plasma to remove a portion of the silicon oxide spacer material in the processing chamber at a pressure of between about 2 Torr and about 4 Torr;

removing the silicon mandrel structures; and

repeating the exposing the silicon oxide spacer material to a hydrogen plasma and the exposing the implanted regions of the silicon oxide spacer material to an etchant plasma until a uniform silicon oxide spacer material top surface profile is achieved.

12. The method of claim 11, wherein the top surface profile is predominantly flat.

13. The method of claim 12, wherein the repeating is performed between about 2 times and about 5 times.

14. The method of claim 11, further comprising:

heating the substrate during the exposure to a fluorine etchant plasma to a temperature of between about 100°

C. and about 500°

C. to sublimate the silicon oxide spacer material of the implanted regions.

15. The method of claim 11, wherein the hydrogen ions are implanted into the one or more regions of the silicon oxide spacer material at an angle normal to a top surface of the silicon oxide spacer material.

16. A method of patterning a substrate, comprising:

biasing the substrate in a processing chamber, the substrate having one or more silicon mandrel structures and a silicon dioxide spacer material formed thereon;

exposing the silicon dioxide spacer material to an unbiased hydrogen plasma to implant hydrogen ions at an angle normal to a top surface of the silicon dioxide spacer material in one or more regions of the silicon dioxide spacer material;

exposing the implanted regions of the silicon dioxide spacer material to a fluorine etchant plasma generated by a remote plasma source to remove a portion of the silicon dioxide spacer material in the processing chamber;

removing the silicon mandrel structures; and

repeating the exposing the silicon dioxide spacer material to a hydrogen plasma and the exposing the implanted regions of the silicon dioxide spacer material to an etchant plasma until a uniform silicon dioxide spacer material top surface profile is achieved.

17. The method of claim 16, wherein the removing the silicon mandrel structures is performed by a plasma etching process.

18. The method of claim 17, wherein the plasma etching process generates an etchant plasma from NF₃ and H precursors.

19. The method of claim 16, wherein the substrate is heated to a temperature between about 100°

C. and about 500°

C. during the repeating the exposing the silicon dioxide spacer material to a hydrogen plasma and the exposing the implanted regions of the silicon dioxide spacer material to an etchant plasma.

20. The method of claim 16, wherein the exposing the silicon dioxide spacer material to an inert plasma is performed at a first pressure of between about 5 mTorr and about 300 mTorr and the exposing the implanted regions of the silicon dioxide spacer material to a fluorine etching plasma is performed at a second pressure about three orders of magnitude greater than the first pressure.