Displays with silicon and semiconducting oxide thin-film transistors
First Claim
1. A display, comprising:
- a substrate;
an array of display pixels on the substrate;
display driver circuitry on the substrate, wherein the display driver circuitry and the display pixels include thin-film transistors, and wherein the thin-film transistors include at least one top gate semiconducting oxide transistor and at least one silicon transistor;
a layer of gate metal that is patterned to form a first gate for the silicon transistor and a second gate for the top gate semiconducting oxide transistor; and
source-drain electrodes for the top gate semiconducting oxide transistor, wherein the source-drain electrodes for the top gate semiconducting oxide transistor do not overlap the second gate.
1 Assignment
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Accused Products
Abstract
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
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Citations
17 Claims
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1. A display, comprising:
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a substrate; an array of display pixels on the substrate; display driver circuitry on the substrate, wherein the display driver circuitry and the display pixels include thin-film transistors, and wherein the thin-film transistors include at least one top gate semiconducting oxide transistor and at least one silicon transistor; a layer of gate metal that is patterned to form a first gate for the silicon transistor and a second gate for the top gate semiconducting oxide transistor; and source-drain electrodes for the top gate semiconducting oxide transistor, wherein the source-drain electrodes for the top gate semiconducting oxide transistor do not overlap the second gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A display, comprising:
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a substrate; an array of display pixels on the substrate; display driver circuitry on the substrate, wherein the display driver circuitry and the display pixels include thin-film transistors and wherein the thin-film transistors include at least one top gate semiconducting oxide transistor and at least one silicon transistor; a layer of gate metal that is patterned to form a first gate for the silicon transistor and a second gate for the top gate semiconducting oxide transistor; a layer of polysilicon on the substrate that forms a silicon channel for the silicon transistor, wherein the first gate is above the layer of polysilicon; a semiconducting oxide layer on the substrate that forms a semiconducting oxide channel for the top gate semiconducting oxide transistor, wherein the second gate is above the semiconducting oxide layer; a gate insulator layer, wherein a first portion of the gate insulator layer is interposed between the first gate and the polysilicon layer and a second portion of the gate insulator layer is interposed between the second gate and the semiconducting oxide layer; source-drain electrodes for the thin-film transistors, wherein the source-drain electrodes are formed from a patterned layer of metal; a silicon oxide layer interposed between the layer of metal from which the source-drain electrodes are formed and the first and second gates; and a silicon nitride layer interposed between the layer of metal from which the source-drain electrodes are formed and the first and second gates.
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13. A display, comprising:
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a light-emitting diode; a top gate semiconducting oxide thin-film transistor coupled to the light-emitting diode; a silicon thin-film transistor; a layer of gate metal that is patterned to form a first gate for the silicon thin-film transistor and a second gate for the top gate semiconducting oxide thin-film transistor; a layer of polysilicon that forms a silicon channel for the silicon thin-film transistor, wherein the first gate is above the layer of polysilicon; a semiconducting oxide layer that forms a semiconducting oxide channel for the top gate semiconducting oxide thin-film transistor, wherein the second gate is above the semiconducting oxide layer; source-drain electrodes for the silicon thin-film transistor and the top gate semiconducting oxide thin-film transistor, wherein the source-drain electrodes are formed from a patterned layer of metal; a gate insulator having a first portion interposed between the first gate and the layer of polysilicon and having a second portion interposed between the second gate and the semiconducting oxide layer; and a dielectric layer formed separately from the gate insulator, wherein the dielectric layer is interposed between the layer of metal from which the source-drain electrodes are formed and the first and second gates. - View Dependent Claims (14, 15)
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16. A display, comprising:
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a light-emitting diode, wherein the light-emitting diode comprises a cathode, an anode, and an organic emissive layer between the anode and the cathode; a silicon thin-film transistor; a semiconducting oxide thin-film transistor having source-drain electrodes, having a semiconducting oxide layer coupled to the source-drain electrodes, and having a gate; a light-shielding layer that overlaps at least part of the silicon thin-film transistor and at least part of the semiconducting oxide thin-film transistor, wherein the organic emissive layer overlaps the light-shielding layer; and a gate insulator layer having a first portion that serves as a gate insulator for the silicon thin-film transistor and having a second portion that serves as a gate insulator for the semiconducting oxide thin-film transistor. - View Dependent Claims (17)
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Specification