Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs
First Claim
1. A transistor device, comprising:
- a semiconductor substrate;
a plurality of trenches formed in the semiconductor substrate, each trench in the plurality being lined with an insulating material along sidewalls inside each trench in the plurality, each trench in the plurality having a bottom electrode in a lower portion of the trench and a top electrode in an upper portion of the trench, wherein the bottom electrode in the corresponding trench in the plurality of trenches and the top electrode in the corresponding trench in the plurality of trenches are separated by an inter-electrode insulating layer; and
a plurality of contact structures formed in the plurality of trenches respectively in an area outside of an active region of the device, each contact structure in the plurality of contact structures being filled with conductive materials and providing electrical connection between the bottom electrode formed in the corresponding trench in the plurality of trenches and the top electrode formed in the corresponding trench in the plurality of trenches, wherein each contact structure in the plurality of contact structures penetrates through an opening in a portion of the top electrode in the corresponding trench of the plurality of trenches and through an opening in a corresponding portion of the inter-electrode insulating layer beneath the top electrode in the corresponding trench of the plurality of trenches to reach the bottom electrode in the corresponding trench of the plurality of trenches.
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Accused Products
Abstract
Embodiments of the present disclosure provide a contact structure in a split-gate trench transistor device for electrically connecting the top electrode to the bottom electrode inside the trench. The transistor device comprises a semiconductor substrate and one or more trenches formed in the semiconductor substrate. The trenches are lined with insulating materials along the sidewalls inside the trenches. Each trench has a bottom electrode in lower portions of the trench and a top electrode in its upper portions. The bottom electrode and the top electrode are separated by an insulating material. A contact structure filled with conductive materials is formed in each trench in an area outside of an active region of the device to connect the top electrode and the bottom electrode. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
29 Citations
6 Claims
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1. A transistor device, comprising:
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a semiconductor substrate; a plurality of trenches formed in the semiconductor substrate, each trench in the plurality being lined with an insulating material along sidewalls inside each trench in the plurality, each trench in the plurality having a bottom electrode in a lower portion of the trench and a top electrode in an upper portion of the trench, wherein the bottom electrode in the corresponding trench in the plurality of trenches and the top electrode in the corresponding trench in the plurality of trenches are separated by an inter-electrode insulating layer; and a plurality of contact structures formed in the plurality of trenches respectively in an area outside of an active region of the device, each contact structure in the plurality of contact structures being filled with conductive materials and providing electrical connection between the bottom electrode formed in the corresponding trench in the plurality of trenches and the top electrode formed in the corresponding trench in the plurality of trenches, wherein each contact structure in the plurality of contact structures penetrates through an opening in a portion of the top electrode in the corresponding trench of the plurality of trenches and through an opening in a corresponding portion of the inter-electrode insulating layer beneath the top electrode in the corresponding trench of the plurality of trenches to reach the bottom electrode in the corresponding trench of the plurality of trenches. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification