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Multi-gate device and method of fabrication thereof

  • US 9,818,872 B2
  • Filed: 06/30/2015
  • Issued: 11/14/2017
  • Est. Priority Date: 06/30/2015
  • Status: Active Grant
First Claim
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1. A method of semiconductor device fabrication, comprising:

  • forming a first fin extending from a substrate, the first fin having a source/drain region and a channel region, wherein the first fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition;

    forming a second fin extending from the substrate and having a source/drain region and a channel region, wherein the second fin includes the first epitaxial layer and the second epitaxial layer;

    oxidizing the second epitaxial layer of the second fin, while a hard mask layer protects the first fin;

    removing the second epitaxial layer from the source/drain region of the first fin to form a gap;

    filling the gap with a dielectric material; and

    while the dielectric material is filled within the gap, growing a first source/drain epitaxial material on at least two surfaces of the first epitaxial layer to form a first source/drain feature on the first fin; and

    growing a second source/drain epitaxial material on the first epitaxial layer of the second fin, to form a second source/drain, and wherein the second source/drain epitaxial material are adjacent the oxidized second epitaxial layer.

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