Multi-gate device and method of fabrication thereof
First Claim
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1. A method of semiconductor device fabrication, comprising:
- forming a first fin extending from a substrate, the first fin having a source/drain region and a channel region, wherein the first fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition;
forming a second fin extending from the substrate and having a source/drain region and a channel region, wherein the second fin includes the first epitaxial layer and the second epitaxial layer;
oxidizing the second epitaxial layer of the second fin, while a hard mask layer protects the first fin;
removing the second epitaxial layer from the source/drain region of the first fin to form a gap;
filling the gap with a dielectric material; and
while the dielectric material is filled within the gap, growing a first source/drain epitaxial material on at least two surfaces of the first epitaxial layer to form a first source/drain feature on the first fin; and
growing a second source/drain epitaxial material on the first epitaxial layer of the second fin, to form a second source/drain, and wherein the second source/drain epitaxial material are adjacent the oxidized second epitaxial layer.
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Abstract
A method of semiconductor device fabrication is described that includes forming a fin extending from a substrate and having a source/drain region and a channel region. The fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition. The second epitaxial layer is removed from the source/drain region of the fin to form a gap. The gap is filled with a dielectric material. Another epitaxial material is formed on at least two surfaces of the first epitaxial layer to form a source/drain feature.
115 Citations
18 Claims
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1. A method of semiconductor device fabrication, comprising:
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forming a first fin extending from a substrate, the first fin having a source/drain region and a channel region, wherein the first fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition; forming a second fin extending from the substrate and having a source/drain region and a channel region, wherein the second fin includes the first epitaxial layer and the second epitaxial layer; oxidizing the second epitaxial layer of the second fin, while a hard mask layer protects the first fin; removing the second epitaxial layer from the source/drain region of the first fin to form a gap; filling the gap with a dielectric material; and while the dielectric material is filled within the gap, growing a first source/drain epitaxial material on at least two surfaces of the first epitaxial layer to form a first source/drain feature on the first fin; and growing a second source/drain epitaxial material on the first epitaxial layer of the second fin, to form a second source/drain, and wherein the second source/drain epitaxial material are adjacent the oxidized second epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a multi-gate device, the method comprising:
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forming an bottom epitaxial layer; growing an epitaxial layer stack including first, second, and third epitaxial layers over the bottom epitaxial layer; oxidizing the bottom epitaxial layer to form an oxide layer; patterning the epitaxial layer stack to form a fin element; forming a dummy gate structure over the fin element; transforming the second epitaxial layer in a first region and a second region of the fin to a dielectric layer, wherein the first and second regions are interposed by a third region of the fin, wherein the third region underlies the dummy gate structure, wherein a thickness of the oxide layer is greater than the thickness of the dielectric material; removing the dummy gate structure after transforming the second epitaxial layer, thereby forming a trench; and forming a metal gate structure in the trench, wherein the metal gate structure is disposed on multiple sides of each of the first and third epitaxial layers. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification