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Semiconductor device and display device including the semiconductor device

  • US 9,818,880 B2
  • Filed: 02/01/2016
  • Issued: 11/14/2017
  • Est. Priority Date: 02/12/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising;

    an oxide semiconductor film;

    a first gate electrode, the oxide semiconductor film overlapping with the first gate electrode;

    a first gate insulating film between the oxide semiconductor film and the first gate electrode;

    a source electrode electrically connected to the oxide semiconductor film; and

    a drain electrode electrically connected to the oxide semiconductor film,wherein the oxide semiconductor film comprises;

    a first oxide semiconductor film in contact with the first gate insulating film; and

    a second oxide semiconductor film in contact with the first oxide semiconductor film,wherein an atomic proportion of In in the first oxide semiconductor film is larger than an atomic proportion of M in the first oxide semiconductor film,wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf,wherein an atomic proportion of In in the second oxide semiconductor film is smaller than the atomic proportion of In in the first oxide semiconductor film,wherein the oxide semiconductor film comprises a first region overlapping with the first gate electrode, a second region overlapping with the source electrode, and a third region overlapping with the drain electrode,wherein the first region does not comprise the second region and the third region,wherein the first oxide semiconductor film has a first thickness,wherein the second oxide semiconductor film has a second thickness overlapped with the first gate electrode and a third thickness overlapped with the source electrode and the drain electrode,wherein the third thickness is larger than the first thickness, andwherein the first thickness is larger than the second thickness.

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