Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications

• US 9,822,132 B2
• Filed: 07/18/2014
• Issued: 11/21/2017
• Est. Priority Date: 07/19/2013
• Status: Active Grant

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA), L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA), L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Inventors: Kuchenbeiser, Glenn, Dussarrat, Christian, Pallem, Venkateswara R.
• Primary Examiner(s): Gambetta, Kelly M
• Application Number:
  US14/905,859
• Publication Number:
  US 20160152640A1
• Time in Patent Office: 1,222 Days
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C07F 7/10 containing nitrogen having a Si-N linkage
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L¹, L², L³ and L⁴ is independently selected from oxygen or nitrogen atoms; L¹ and L² are joined together via a carbon bridge having one to three carbon atoms; L³ and L⁴ are joined together via a carbon bridge having one to three carbon atoms; L¹, L² and the carbon bridge forming a monoanionic ligand bonded to silicon; and L³, L⁴ and the carbon bridge form a monoanionic ligand bonded to silicon.

Claims

1. A hexacoordinate silicon-containing molecule having the following formula:

2. The hexacoordinate silicon-containing molecule of claim 1, wherein the molecule has the following formula:

3. The hexacoordinate silicon-containing molecule of claim 1, wherein the molecule has the following formula:

4. The hexacoordinate silicon-containing molecule of claim 1, wherein the molecule has the following formula:

5. The hexacoordinate silicon-containing molecule of claim 1, wherein the molecule has the following formula:

6. The hexacoordinate silicon-containing molecule of claim 1, wherein the molecule has the following formula:

7. The hexacoordinate silicon-containing molecule of claim 1, wherein the molecule has the following formula:

8. A method of deposition a Si-containing layer on a substrate, the method comprising:

introducing a vapor of the hexacoordinate silicon-containing molecule of claim 1 into a reactor having a substrate disposed therein; and

depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a vapor deposition method.

9. The method of claim 8, further comprising introducing a co-reactant into the reactor.

10. The method of claim 8, wherein the vapor deposition process is a chemical vapor deposition process.

11. The method of claim 8, wherein the vapor deposition process is an atomic layer deposition (ALD) process.

12. The method of claim 8, wherein the hexacoordinate silicon-containing molecule has the following formula:

13. The method of claim 8, wherein the hexacoordinate silicon-containing molecule is SiH₂(N^iPr-amd)₂.

14. The hexacoordinate silicon-containing molecule of claim 2, wherein the hexacoordinate silicon-containing molecule is SiH₂(N^iPr-amd)₂.