Chemical device with thin conductive element

• US 9,823,217 B2
• Filed: 02/03/2016
• Issued: 11/21/2017
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Original Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Inventors: Fife, Keith G., Owens, Jordan, Li, Shifeng, Bustillo, James
• Primary Examiner(s): Kusumakar, Karen
• Application Number:
  US15/014,802
• Publication Number:
  US 20160153930A1
• Time in Patent Office: 657 Days
• CPC Class Codes: B01L 2200/0668 Trapping microscopic beads
• CPC Class Codes: B01L 2300/0636 Integrated biosensor, microarrays
• CPC Class Codes: B01L 2300/0877 Flow chambers
• CPC Class Codes: B01L 3/502761 specially adapted for handling suspended solids or molecules independently from the bulk fluid flow, e.g. for trapping or sorting beads, for physically stretching molecules investigating characteristics of particles G01N15/00
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

Claims

1. A chemical device, comprising:

a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;

a dielectric layer overlying the floating gate structure;

a conductive via formed through the dielectric layer and in electrical communication with an uppermost floating gate conductor of the plurality of floating gate conductors, the conductive via having a width less than the uppermost floating gate conductor;

a conductive element overlying and in communication with the uppermost floating gate conductor in the plurality of floating gate conductors through the conductive via, the conductive element wider and thinner than the uppermost floating gate conductor; and

a dielectric material defining an opening extending to an upper surface of the conductive element.

2. The chemical device of claim 1, wherein the conductive element comprises at least one of titanium, tantalum, titanium nitride, and aluminum, and/or oxides and/or mixtures thereof.

3. The chemical device of claim 1, further comprising a second conductive element, wherein the distance between the conductive element and the second conductive element in the chemical device is about 0.18 microns.

4. The chemical device of claim 1, wherein the thickness of the conductive element is about 0.1-0.2 microns.

5. The chemical device of claim 1, wherein the uppermost floating gate conductor in the plurality of floating gate conductors has a thickness greater than a thickness of other floating gate conductors in the plurality of floating gate conductors.

6. The chemical device of claim 1, wherein the conductive element comprises a material different from a material comprising the uppermost floating gate conductor.

7. The chemical device of claim 1, wherein an inner surface of the dielectric material and the upper surface of the conductive element define an outer surface of a reaction region for the chemical device.

8. The chemical device of claim 1, wherein the plurality of floating gate conductors is within a layer that includes array lines and bus lines.

9. The chemical device of claim 1, including a sensor region containing the chemically-sensitive field effect transistor and a peripheral region containing peripheral circuitry to obtain a signal from the chemically-sensitive field effect transistor.

10. The chemical device of claim 9, wherein the conductive element is within a conductive layer that is only within the sensor region.

11. The chemical device of claim 9, wherein the conductive element comprises a material not within the peripheral region.

12. The chemical device of claim 1, wherein the floating gate structure comprising the plurality of floating gate conductors electrically coupled to one another and separated by dielectric layers.

13. The chemical device of claim 1, wherein a first layer of the dielectric material is silicon nitride and a second layer is at least one of silicon dioxide and tetraethyl orthosilicate, and the second layer defines sidewalls of the opening.

14. The chemical device of claim 1, further comprising:

a microfluidic structure in fluid flow communication with the chemically-sensitive field effect transistor, and arranged to deliver analytes for sequencing.

15. The chemical device of claim 1, further comprising a conductive barrier layer overlying the conductive via and dielectric layer and underlying the conductive element.

16. The chemical device of claim 1, further comprising a conductive barrier layer disposed between the uppermost floating gate conductor and a conductive material of the conductive via, the conductive barrier layer further disposed between the dielectric layer and the conductive material of the conductive via.

17. A method for manufacturing a chemical device, the method comprising:

forming a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;

forming a dielectric layer overlying the floating gate structure;

forming a conductive via formed through the dielectric layer and in electrical communication with an uppermost floating gate conductor of the plurality of floating gate conductors, the conductive via having a width less than the uppermost floating gate conductor;

forming a conductive element overlying and in communication with the uppermost floating gate conductor in the plurality of floating gate conductors through the conductive via, the conductive element wider and thinner than the uppermost floating gate conductor; and

forming a dielectric material defining an opening extending to an upper surface of the conductive element.

18. The method for manufacturing a chemical device of claim 17, wherein the upper surface of the conductive element defines a bottom surface of a reaction region for the chemical device.

19. The method for manufacturing a chemical device of claim 17, wherein an inner surface of the dielectric material and the upper surface of the conductive element define an outer boundary of a reaction region for the chemical device.

20. The method for manufacturing a chemical device of claim 17, wherein the conductive element is formed within a conductive layer that is only within a sensor region of the chemical device.