Methods and systems for advanced ion control for etching processes

• US 9,824,896 B2
• Filed: 11/04/2015
• Issued: 11/21/2017
• Est. Priority Date: 11/04/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Tan, Zhongkui, Fu, Qian, Wu, Ying, Xu, Qing, Drewery, John
• Primary Examiner(s): Lu, Jiong-Ping
• Application Number:
  US14/932,458
• Publication Number:
  US 20170125260A1
• Time in Patent Office: 748 Days
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 21/308 using masks H01L21/3063, H01L21/3065 take precedence
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: Y02P 80/30 Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

Claims

1. A method for plasma etching of a target material in semiconductor device fabrication, comprising:

(a) disposing a substrate on a substrate holder within a process module, wherein the substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material;

(b) generating a plasma in exposure to the substrate;

(c) for a first duration, applying a bias voltage at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level and supplying a lower primary coil power to generate the plasma in exposure to the substrate;

(d) for a second duration, after completion of the first duration, applying a bias voltage at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level and supplying a higher primary coil power to generate the plasma in exposure to the substrate, wherein the second bias voltage setting is greater than 0 V, and wherein the second bias voltage setting is sufficiently low to avoid ion-induced removal of the mask material; and

(e) repeating operations (c) and (d) in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate, such that when the bias voltage transitions from the low bias voltage level to the high bias voltage level, the higher primary coil power also transitions to the lower primary coil power.

2. The method as recited in claim 1, wherein the mask material is resistant to chemical etching in exposure to the plasma, and wherein a threshold bias voltage is required for ion-induced removal of the mask material in exposure to the plasma such that the mask material is not subject to ion-induced sputtering when bias voltage applied to the substrate holder is below the threshold bias voltage, and wherein the second bias voltage setting in operation (d) is near the threshold bias voltage, and

wherein the target material is subject to both chemical etching in exposure to the plasma and to ion-assisted etching in accordance with bias voltage applied to the substrate holder.

3. The method as recited in claim 2, wherein a process gas mixture used to generate the plasma in operation (b) includes oxygen gas and a passivation gas.

4. The method as recited in claim 3, wherein the mask material is one or more of SiO₂, SiN, SiON, and Si-ARC, and

wherein the target material is one or more of a photoresist material, a carbon material, a doped carbon material, a carbon doped material, a silicon material, and a metal.

5. The method as recited in claim 1, wherein the first bias voltage setting corresponding to the high bias voltage level is within a range extending from about 400 V to about 3000 V, and

wherein the second bias voltage setting corresponding to the low bias voltage level is within a range extending from about 20 V to about 300 V.

6. The method as recited in claim 1, wherein the first duration is at least 1 second, and wherein the second duration is at least 1 second.

7. The method as recited in claim 1, wherein the first duration is less than 100 milliseconds, and wherein the second duration is less than 100 milliseconds.

8. The method as recited in claim 7, wherein the first duration and the second duration together define a bias voltage cycle, and wherein a frequency of cycling of the bias voltage is on a same order of magnitude as a frequency of radiofrequency (RF) signals transmitted to the substrate holder to generate the bias voltage.

9. The method as recited in claim 1, wherein the first duration is different than the second duration.

10. The method as recited in claim 1, wherein the first duration is substantially equal to the second duration.

11. The method as recited in claim 1, wherein the second bias voltage applied during the second duration in operation (d) is generated by continuous wave radiofrequency (RF) signals, and

wherein the first bias voltage applied during the first duration in operation (c) is generated by adding RF signals to the continuous wave RF signals.

12. The method as recited in claim 11, wherein the first duration is less than ten percent of a sum of the first duration and second duration.

13. The method as recited in claim 1, wherein the lower primary coil power is within a range extending from about 50 Watts (W) to about 2000 W, and

wherein the higher primary coil power is within a range extending from about 2000 W to about 5000 W.

14. The method as recited in claim 1, wherein applying the bias voltage at the substrate holder at the first bias voltage setting corresponding to the high bias voltage level for the first duration in operation (c) includes transmitting radiofrequency (RF) signals of higher frequency to the substrate holder to generate the bias voltage at the substrate holder at the first bias voltage setting corresponding to the high bias voltage level, and

wherein applying the bias voltage at the substrate holder at the second bias voltage setting corresponding to the low bias voltage level for the second duration in operation (d) includes transmitting RF signals of lower frequency to the substrate holder to generate the bias voltage at the substrate holder at the second bias voltage setting corresponding to the low bias voltage level.

15. The method as recited in claim 14, wherein the RF signals transmitted during the first duration in operation (c) have a frequency within a range extending from about 13 megaHertz (MHz) to about 60 MHz, and

wherein the RF signals transmitted during the second duration in operation (d) have a frequency within a range extending from about 400 kiloHertz (kHz) to about 2 MHz.

16. The method as recited in claim 1, further comprising:

in conjunction with operation (c) during the first duration, supplying a lower primary coil power to generate the plasma in exposure to the substrate in operation (b); and

in conjunction with operation (d) during the second duration, supplying a higher primary coil power to generate the plasma in exposure to the substrate in operation (b),

wherein applying the bias voltage at the substrate holder at the first bias voltage setting corresponding to the high bias voltage level for the first duration in operation (c) includes transmitting radiofrequency (RF) signals of higher frequency to the substrate holder to generate the bias voltage at the substrate holder at the first bias voltage setting corresponding to the high bias voltage level, and

wherein applying the bias voltage at the substrate holder at the second bias voltage setting corresponding to the low bias voltage level for the second duration in operation (d) includes transmitting RF signals of lower frequency to the substrate holder to generate the bias voltage at the substrate holder at the second bias voltage setting corresponding to the low bias voltage level.

17. The method as recited in claim 16, wherein the lower primary coil power is within a range extending from about 50 Watts (W) to about 2000 W,

wherein the higher primary coil power is within a range extending from about 2000 W to about 5000 W,

wherein the RF signals transmitted during the first duration in operation (c) have a frequency within a range extending from about 13 megaHertz (MHz) to about 60 MHz, and

wherein the RF signals transmitted during the second duration in operation (d) have a frequency within a range extending from about 400 kiloHertz (kHz) to about 2 MHz.

18. A method for plasma etching of a target material in semiconductor device fabrication, comprising:

(a) disposing a substrate on a substrate holder within a process module, wherein the substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material;

(b) generating a plasma in exposure to the substrate;

(c) for a first duration, applying a bias voltage at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level and supplying a lower primary coil power to generate the plasma in exposure to the substrate;

(d) for a second duration, after completion of the first duration, applying a bias voltage at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level and supplying a higher primary coil power to generate the plasma in exposure to the substrate, wherein the second bias voltage setting is greater than 0 V, and wherein the second bias voltage setting is sufficiently low to avoid ion-induced removal of the mask material;

(e) for a third duration, after completion of the second duration, applying zero bias voltage at the substrate holder and supplying an amount of primary coil power to generate the plasma in exposure to the substrate; and

(f) repeating operations (c), (d), and (e) in a successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

19. The method as recited in claim 18, wherein the amount of primary coil power supplied in operation (e) is either the lower primary coil power supplied in operation (c), or the higher primary coil power supplied in operation (d), or between the lower primary coil power supplied in operation (c) and the higher primary coil power supplied in operation (d).

20. The method as recited in claim 18, wherein the first bias voltage setting corresponding to the high bias voltage level is within a range extending from about 400 V to about 3000 V, and

wherein the second bias voltage setting corresponding to the low bias voltage level is within a range extending from about 20 V to about 300 V.

21. The method as recited in claim 18, wherein the lower primary coil power is within a range extending from about 50 Watts (W) to about 2000 W, and

wherein the higher primary coil power is within a range extending from about 2000 W to about 5000 W.

22. The method as recited in claim 18, wherein applying the bias voltage at the substrate holder at the first bias voltage setting corresponding to the high bias voltage level for the first duration in operation (c) includes transmitting radiofrequency (RF) signals of higher frequency to the substrate holder to generate the bias voltage at the substrate holder at the first bias voltage setting corresponding to the high bias voltage level, and

wherein applying the bias voltage at the substrate holder at the second bias voltage setting corresponding to the low bias voltage level for the second duration in operation (d) includes transmitting RF signals of lower frequency to the substrate holder to generate the bias voltage at the substrate holder at the second bias voltage setting corresponding to the low bias voltage level.

23. The method as recited in claim 22, wherein the RF signals transmitted during the first duration in operation (c) have a frequency within a range extending from about 13 megaHertz (MHz) to about 60 MHz, and

wherein the RF signals transmitted during the second duration in operation (d) have a frequency within a range extending from about 400 kiloHertz (kHz) to about 2 MHz.