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FinFET gate structure and method for fabricating the same

  • US 9,824,929 B2
  • Filed: 12/16/2016
  • Issued: 11/21/2017
  • Est. Priority Date: 10/28/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a first semiconductor fin on the semiconductor substrate; and

    a n-type gate structure over the first semiconductor fin, wherein the n-type gate structure is fluorine incorporated and comprises;

    a first initial layer over the first semiconductor fin;

    a first high-k dielectric layer over the first initial layer and enclosed by a first gate spacer;

    a n-type work function metal layer overlying the first high-k dielectric layer, the n-type work function metal layer comprising a TiAl (titanium aluminum) alloy or TaAl (tantalum aluminum) alloy, wherein an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3 when the n-type work function metal layer comprises the TiAl alloy;

    a first blocking metal layer overlying the n-type work function metal layer; and

    a first metal filler peripherally enclosed by the first blocking metal layer, such that the first metal filler is enclosed by a first stacked structure, wherein a side wall of the first stacked structure contains a fluorine concentration substantially from 5 atom percent (at %) to 20 at %, and a bottom of the first stacked structure contains a fluorine concentration substantially from 1 at % to 15 at %.

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