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Semiconductor device

  • US 9,825,027 B1
  • Filed: 01/22/2017
  • Issued: 11/21/2017
  • Est. Priority Date: 01/22/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device having a plurality of transistors, which are arranged in one direction and have first electrodes in first trenches formed in a front surface of a semiconductor substrate, the semiconductor device comprising:

  • two second trenches, which are formed side by side between the first trenches of two adjacent transistors in the one direction, on the front surface of the semiconductor substrate;

    a second electrode, which is formed in each of the two second trenches;

    a first impurity region, which has a first conductivity type and is formed between the first trench and the second trench adjacent to the first trench, in the front surface of the semiconductor substrate;

    a second impurity region, which has a second conductivity type and is formed to abut on the first trench, in a surface of the first impurity region, the second conductivity type being opposite to the first conductivity type;

    a third impurity region, which has the second conductivity type and is formed to abut on the second trench, in the surface of the first impurity region;

    a fourth impurity region, which has the first conductivity type and is formed to be in contact with the two second trenches on the front surface of the semiconductor substrate and has a higher impurity concentration than the first impurity region;

    a fifth impurity region, which has the second conductivity type and is formed below the first impurity region and the fourth impurity region; and

    a third electrode, which is formed on the front surface of the semiconductor substrate and is electrically connected to the first impurity region, the second impurity region, the third impurity region, and the fourth impurity region,wherein the first impurity region is in contact with both the fifth impurity region and the third electrode, andwherein the fourth impurity region is in contact with both the fifth impurity region and the third electrode.

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