Semiconductor element and method for producing the same
First Claim
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1. A semiconductor element comprising:
- a termination region outside an active region, the active region comprising trenches, wherein a center poly electrode is disposed inside at least one of the trenches;
a transient region disposed between the active region and the termination region, the transient region comprising an inside trench;
at least two gate poly electrodes are disposed adjacent to an upper portion of the center poly electrode;
a p-body region disposed between upper portions of the trenches;
a source region disposed at a side of the gate poly electrodes, wherein the source region is not disposed at the p-body region shared with the gate poly electrode formed in the inside trench;
a channel stopper region disposed in the termination region, the channel stopper region including a via hole; and
an equipotential ring metal disposed over the channel stopper region, the equipotential ring metal electrically connecting to the channel stopper region through the via hole included in the channel stopper region, wherein the via hole penetrates the channel stopper region.
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Abstract
A semiconductor element and a method for producing the same are provided. A semiconductor element includes an active region comprising trenches, a termination region outside the active region, a transient region disposed between the active region and the termination region, the transient region including an inside trench, in which a center poly electrode is disposed inside at least one of the trenches of the active region, at least two gate poly electrodes are disposed adjacent to an upper portion of the center poly electrode, a p-body region is disposed between upper portions of the trenches, and a source region is disposed at a side of the gate poly electrodes.
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Citations
26 Claims
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1. A semiconductor element comprising:
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a termination region outside an active region, the active region comprising trenches, wherein a center poly electrode is disposed inside at least one of the trenches; a transient region disposed between the active region and the termination region, the transient region comprising an inside trench; at least two gate poly electrodes are disposed adjacent to an upper portion of the center poly electrode; a p-body region disposed between upper portions of the trenches; a source region disposed at a side of the gate poly electrodes, wherein the source region is not disposed at the p-body region shared with the gate poly electrode formed in the inside trench; a channel stopper region disposed in the termination region, the channel stopper region including a via hole; and an equipotential ring metal disposed over the channel stopper region, the equipotential ring metal electrically connecting to the channel stopper region through the via hole included in the channel stopper region, wherein the via hole penetrates the channel stopper region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor element comprising:
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an active region comprising active trenches, wherein the active trenches comprise a first trench and a second trench, wherein each active trench includes a U-shaped portion of oxide layer, and wherein each U-shaped portion includes a left wall, a bottom, and a right wall; a termination region outside the active region; a transient region disposed between the active region and the termination region, the transient region comprising an inside trench; a first center poly electrode located between a left wall of the first trench and a right wall of the first trench; a left gate poly electrode located in a top region of the left wall of the first trench; a right gate poly electrode located in a top region of the right wall of the first trench, wherein the left gate poly electrode and the right gate poly electrode are adjacent to an upper portion of the center poly electrode; a p-body region located between the right wall of the first trench and a left wall of the second trench, and located horizontally to the right of the right gate poly electrode; a source region located directly on top of the p-body region; a channel stopper region disposed in the termination region, the channel stopper region including a via hole that penetrates the channel stopper region; and an equipotential ring metal disposed over the channel stopper region, the equipotential ring metal electrically connecting to the channel stopper region through the via hole included in the channel stopper region, wherein the first trench includes an outer left gate insulating film adjacent to a left surface of the left gate poly electrode, and an inner left gate insulating film adjacent to a right surface of the left gate poly electrode, wherein the outer left gate insulating film has a thin width, the inner left gate insulating film has a thick width, and wherein the thin width is smaller than the thick width.
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25. A semiconductor element comprising:
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a termination region disposed adjacent an active region, the active region including a trench; a transient region disposed between the active region and the termination region, the transient region including an inside trench having a center poly electrode disposed therein, a width of the trench being different from a width of the inside trench; an extension gate poly electrode disposed above entire planar upper surfaces of the inside trench and the trench; an equipotential ring electrode disposed in the termination region; and an insulating layer disposed between the equipotential ring electrode and a metal layer, and between the equipotential ring electrode and a channel stopper region, wherein via holes respectively electrically connect the metal layer to the equipotential ring electrode and the channel stopper region.
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26. A semiconductor element comprising:
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a termination region disposed adjacent an active region, the active region including a trench having a center poly electrode disposed therein; a transient region disposed between the active region and the termination region, the transient region including an inside trench, a width of the trench being different from a width of the inside trench; an extension gate poly electrode disposed above an entire planar upper surface of the inside trench and a portion of a planar upper surface of the trench; an equipotential ring electrode and a channel stopper region both disposed in the termination region; and an insulating layer disposed between the equipotential ring electrode and a metal layer, and between the equipotential ring electrode and a channel stopper region, wherein via holes respectively electrically connect the metal layer to the equipotential ring electrode and the channel stopper region.
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Specification