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Integrated CMOS back cavity acoustic transducer and the method of producing the same

  • US 9,828,240 B2
  • Filed: 02/18/2016
  • Issued: 11/28/2017
  • Est. Priority Date: 10/15/2013
  • Status: Active Grant
First Claim
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1. A method of fabricating a MEMS device comprising:

  • bonding a MEMS substrate to a CMOS substrate, the MEMS substrate including a movable element;

    forming a cavity in the CMOS substrate;

    forming a back cavity, the back cavity being connected to the CMOS substrate and formed at least partially by the cavity in the CMOS substrate thereby acoustically coupling the movable element to the back cavity;

    forming at least one metal pad on the CMOS substrate; and

    forming at least one stud bump on the at least one metal pad,wherein the at least one stud bump protrudes above a top surface of the MEMS substrate.

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