Integrated CMOS back cavity acoustic transducer and the method of producing the same

• US 9,828,240 B2
• Filed: 02/18/2016
• Issued: 11/28/2017
• Est. Priority Date: 10/15/2013
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Liu, Fang, Daneman, Michael Julian, Kim, Brian, Minervini, Anthony
• Primary Examiner(s): Pizarro, Marcos D
• Assistant Examiner(s): GARCES, NELSON Y
• Application Number:
  US15/047,579
• Publication Number:
  US 20160167956A1
• Time in Patent Office: 649 Days
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 3/0018 Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00309 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H04R 19/005 using semiconductor materials

Abstract

A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.

Claims

1. A method of fabricating a MEMS device comprising:

bonding a MEMS substrate to a CMOS substrate, the MEMS substrate including a movable element;

forming a cavity in the CMOS substrate;

forming a back cavity, the back cavity being connected to the CMOS substrate and formed at least partially by the cavity in the CMOS substrate thereby acoustically coupling the movable element to the back cavity;

forming at least one metal pad on the CMOS substrate; and

forming at least one stud bump on the at least one metal pad,

wherein the at least one stud bump protrudes above a top surface of the MEMS substrate.

2. The method of fabricating a MEMS device, as recited in claim 1, further including forming an inner seal ring on the MEMS substrate.

3. The method of fabricating a MEMS device, as recited in claim 1, further including forming an RF shield encapsulating the MEMS device.

9. The method of fabricating a MEMS device, as recited in claim 1, further including bonding a carrier substrate to the at least one stud bump using a thermal or thermos-sonic compression bond.

10. The method of fabricating a MEMS device, as recited in claim 1, further including forming at least one stud bump on the CMOS substrate.

11. The method of fabricating a MEMS device, as recited in claim 1, further including sealing the edges of the MEMS substrate using an underfill.

12. The method of fabricating a MEMS device, as recited in claim 11, wherein the underfill is disposed between the CMOS substrate and a carrier substrate and the method of fabricating further includes forming solder balls on top of the carrier substrate.

13. The method of fabricating a MEMS device, as recited in claim 1, further including attaching a carrier substrate to at the least one stud bump by thermal compression bonding, the stud bump being disposed on the CMOS substrate.

14. The method of fabricating a MEMS device, as recited in claim 1, further including etching the back cavity in the CMOS substrate to enlarge a back cavity volume.

15. The method of fabricating a MEMS device, as recited in claim 1, wherein the cavity and the back cavity are formed using separate etching steps.

16. The method of fabricating a MEMS device, as recited in claim 1, further including partially etching the cavity during a first etching step and during a second etching step, forming the back cavity and completing the etching of the cavity.

18. The method of fabricating a MEMS device, as recited in claim 1, further including bonding the at least one stud bump to the substrate by thermal bonding or thermo-sonic compression bonding.

19. The method of fabricating a MEMS device, as recited in claim 1, further including depositing at least one solder ball onto a carrier substrate on an outside surface of the carrier substrate opposing another outside surface of the carrier substrate onto which the at least one stud bump is formed.

20. The method of fabricating a MEMS device, as recited in claim 1, further including attaching a cap layer to the CMOS substrate.

21. The method of fabricating a MEMS device, as recited in claim 1, further including connecting the at least one metal pad to a carrier substrate by the at least one stud bump.

4. The method of fabricating a MEMS device, as recited 1, further including covering the back cavity with a cap layer.

5. The method of fabricating a MEMS device, as recited in claim 4, further including connecting the cap layer to the CMOS substrate using a conductive material, epoxy or metal paste.

6. The method of fabricating a MEMS device, as recited in claim 4, further including flipping the MEMS device before covering the back cavity with the cap layer.

7. The method of fabricating a MEMS device, as recited in claim 6, further including bonding the at least one stud bump to the CMOS substrate.

8. The method of fabricating a MEMS device, as recited in claim 6, wherein the MEMS substrate and the CMOS substrate are a part of a wafer and the method of fabricating further includes performing wafer sawing and flipping back the MEMS device.

17. A method of fabricating a MEMS device comprising:

forming the at least one stud bump inside at least one underfill;

bonding a MEMS substrate to a CMOS substrate, the MEMS substrate including a movable element;

forming a cavity in the CMOS substrate;

forming a back cavity, the back cavity being connected to the CMOS substrate and formed at least partially by the cavity in the CMOS substrate thereby acoustically coupling the movable element to the back cavity;

forming at least one metal pad on the CMOS substrate; and

forming at least one stud bump on the at least one metal pad.