Semiconductor film and semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first electrode layer;
an insulating film in contact with the first electrode layer;
an oxide semiconductor layer overlapping with the first electrode layer with the insulating film provided therebetween; and
a second electrode layer in contact with the oxide semiconductor layer,wherein light absorption of the oxide semiconductor layer is observed by a constant photocurrent method in a wavelength range of 400 nm to 800 nm,wherein an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×
10−
2/cm, andwherein the oxide semiconductor layer comprises a multilayer film.
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Abstract
An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10−2/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a first electrode layer; an insulating film in contact with the first electrode layer; an oxide semiconductor layer overlapping with the first electrode layer with the insulating film provided therebetween; and a second electrode layer in contact with the oxide semiconductor layer, wherein light absorption of the oxide semiconductor layer is observed by a constant photocurrent method in a wavelength range of 400 nm to 800 nm, wherein an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×
10−
2/cm, andwherein the oxide semiconductor layer comprises a multilayer film. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a gate electrode layer; a gate insulating film in contact with the gate electrode layer; an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating film provided therebetween; and a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, wherein light absorption of the oxide semiconductor layer is observed by a constant photocurrent method in a wavelength range of 400 nm to 800 nm, wherein an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×
10−
2/cm, andwherein the oxide semiconductor layer is a multilayer film in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification