Laser light source for a vehicle
First Claim
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1. A light apparatus for a vehicle, the apparatus comprising:
- a housing to be configured to the vehicle;
an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising;
an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;
an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;
multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;
a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3;
a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3; and
a non-polar or semipolar configuration characterizing the gallium and nitrogen containing material;
an optical component coupled to an output laser beam of the edge emitting laser diode device;
a phosphor material coupled to the edge emitting laser diode device to be excited by a laser beam from the edge emitting laser diode device; and
a substantially white light output from the edge emitting laser diode device.
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Abstract
The present invention is directed to a laser light source for a vehicle.
275 Citations
16 Claims
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1. A light apparatus for a vehicle, the apparatus comprising:
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a housing to be configured to the vehicle; an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising; an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3; an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm; multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm; a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3; a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3; and a non-polar or semipolar configuration characterizing the gallium and nitrogen containing material; an optical component coupled to an output laser beam of the edge emitting laser diode device; a phosphor material coupled to the edge emitting laser diode device to be excited by a laser beam from the edge emitting laser diode device; and a substantially white light output from the edge emitting laser diode device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light source apparatus for a vehicle comprising:
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a housing to be configured to the vehicle; a plurality of edge emitting laser diode devices disposed on a common gallium and nitrogen containing material coupled to the housing, each of the plurality of edge emitting laser diode devices configured to emit a laser beam at a different wavelength, at least one of the edge emitting laser diode devices comprising; an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3; an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm; multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm; a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19-3; and a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3; an output provided on the plurality of edge emitting laser diode devices to output a laser beam; and one or more optical members coupled to the output of the plurality of edge emitting laser diode devices, at least one of the one or more optical members comprising a phosphor material, the one or more optical members configured to output a substantially white emission. - View Dependent Claims (12, 13, 14)
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15. A light apparatus, the apparatus comprising:
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a housing to be configured to a vehicle; an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising; an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3; an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm; multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm; a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3; and a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3; an optical component coupled to an output laser beam of the edge emitting laser diode device; a color wheel having phosphor material, the color wheel coupled to the edge emitting laser diode device, the phosphor material arranged to be excited by a laser beam from the edge emitting laser diode device; a substantially white light output from the color wheel; a reflector coupled to an output of the edge emitting laser diode device; and a controller coupled to the light apparatus; wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device. - View Dependent Claims (16)
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Specification