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Semiconductor device and electronic appliance

  • US 9,830,878 B2
  • Filed: 06/07/2016
  • Issued: 11/28/2017
  • Est. Priority Date: 09/16/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor;

    a second transistor;

    a third transistor;

    a fourth transistor;

    a fifth transistor; and

    a sixth transistor,wherein;

    a channel formation region of each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor includes an oxide semiconductor;

    one of a source and a drain of the first transistor is directly connected to one of a source and a drain of the second transistor;

    one of a source and a drain of the third transistor is directly connected to one of a source and a drain of the fourth transistor;

    one of a source and a drain of the fifth transistor is directly connected to one of a source and a drain of the sixth transistor;

    a gate of the first transistor is directly connected to the one of the source and the drain of the third transistor;

    a gate of the second transistor is directly connected to a gate of the fourth transistor;

    the gate of the second transistor is directly connected to the one of the source and the drain of the fifth transistor;

    a gate of the third transistor is directly connected to a gate of the sixth transistor;

    a gate of the fifth transistor is directly connected to the other of the source and the drain of the fifth transistor;

    the other of the source and the drain of the second transistor is directly connected to the other of the source and the drain of the fourth transistor;

    the other of the source and the drain of the second transistor is directly connected to the other of the source and the drain of the sixth transistor;

    a clock signal is inputted to the other of the source and the drain of the fifth transistor;

    a first signal is inputted to the gate of the third transistor; and

    a second signal is outputted from the one of the source and the drain of the first transistor.

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