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Spin orbit torque (SOT) magnetic memory cell and array

  • US 9,830,968 B2
  • Filed: 09/15/2016
  • Issued: 11/28/2017
  • Est. Priority Date: 03/16/2016
  • Status: Active Grant
First Claim
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1. A magnetic memory comprising:

  • a conductive layer including a first terminal, a second terminal, and a portion located between the first terminal and the second terminal;

    a magnetoresistive element including;

    a first magnetic layer having a fixed magnetization;

    a second magnetic layer having a changeable magnetization and being disposed between the portion and the first magnetic layer; and

    a nonmagnetic layer between the first magnetic layer and the second magnetic layer;

    a diode including a third terminal and a fourth terminal, the third terminal being electrically connected to the first magnetic layer;

    a transistor including fifth and sixth terminals and a control terminal, the fifth terminal being electrically connected to the first terminal; and

    a circuit electrically connected to the second terminal, the fourth terminal, the sixth terminal, and the control terminal,whereinwhen information is to be written into the second magnetic layer, the circuit switches on the transistor, applies a reverse bias to the diode, and supplies current between the second terminal and the sixth terminal, andwhen information is to be read from the second magnetic layer, the circuit switches off the transistor, and supplies current between the second terminal and the fourth terminal.

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