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Multiple pre-clean processes for interconnect fabrication

  • US 9,831,182 B2
  • Filed: 12/11/2015
  • Issued: 11/28/2017
  • Est. Priority Date: 09/24/2015
  • Status: Active Grant
First Claim
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1. A method of making an interconnect structure, the method comprising:

  • forming an opening within a dielectric material layer disposed on a conductive substrate, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the conductive substrate;

    performing a plasma treatment process to chemically modify exposed surfaces of the dielectric material layer and the conductive substrate that line the opening, a chemically modified dielectric surface layer being formed that is more dense than the dielectric material layer, comprises a contact product formed from reaction of the dielectric material layer and plasma, the plasma being a silicon-containing plasma, a nitrogen-containing plasma, a phosphorus-containing plasma, a boron-containing plasma, or an oxygen-containing plasma, and comprises a higher concentration of silicon, nitrogen, phosphorus, boron, or oxygen than the dielectric material layer, and a layer of metal contact product also being formed on the conductive substrate at an end of the opening within the dielectric material layer, the layer of metal contact product formed from reaction of the conductive substrate and the silicon-containing plasma, the nitrogen-containing plasma, the phosphorus-containing plasma, the boron-containing plasma, or the oxygen-containing plasma;

    performing a chemical treatment process, after performing the plasma treatment process, to remove the metal contact product;

    disposing a metal diffusion barrier liner in the opening and directly on the conductive substrate; and

    disposing a conductive material on the metal diffusion barrier liner to substantially fill the opening and form the interconnect structure.

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