Multiple pre-clean processes for interconnect fabrication
First Claim
1. A method of making an interconnect structure, the method comprising:
- forming an opening within a dielectric material layer disposed on a conductive substrate, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the conductive substrate;
performing a plasma treatment process to chemically modify exposed surfaces of the dielectric material layer and the conductive substrate that line the opening, a chemically modified dielectric surface layer being formed that is more dense than the dielectric material layer, comprises a contact product formed from reaction of the dielectric material layer and plasma, the plasma being a silicon-containing plasma, a nitrogen-containing plasma, a phosphorus-containing plasma, a boron-containing plasma, or an oxygen-containing plasma, and comprises a higher concentration of silicon, nitrogen, phosphorus, boron, or oxygen than the dielectric material layer, and a layer of metal contact product also being formed on the conductive substrate at an end of the opening within the dielectric material layer, the layer of metal contact product formed from reaction of the conductive substrate and the silicon-containing plasma, the nitrogen-containing plasma, the phosphorus-containing plasma, the boron-containing plasma, or the oxygen-containing plasma;
performing a chemical treatment process, after performing the plasma treatment process, to remove the metal contact product;
disposing a metal diffusion barrier liner in the opening and directly on the conductive substrate; and
disposing a conductive material on the metal diffusion barrier liner to substantially fill the opening and form the interconnect structure.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of making an interconnect structure includes forming an opening within a dielectric material layer disposed on a substrate including a conductive material, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the substrate; performing a plasma treatment process to chemically enrich exposed surfaces of the dielectric material that line the opening to form a chemically-enriched dielectric surface layer that included an element in a higher concentration than a remaining portion of the dielectric material layer; performing a chemical treatment process to remove a metal contact product from the portion of the substrate that is in contact with the opening; and disposing a conductive material in the opening to substantially fill the opening and form the interconnect structure.
29 Citations
9 Claims
-
1. A method of making an interconnect structure, the method comprising:
-
forming an opening within a dielectric material layer disposed on a conductive substrate, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the conductive substrate; performing a plasma treatment process to chemically modify exposed surfaces of the dielectric material layer and the conductive substrate that line the opening, a chemically modified dielectric surface layer being formed that is more dense than the dielectric material layer, comprises a contact product formed from reaction of the dielectric material layer and plasma, the plasma being a silicon-containing plasma, a nitrogen-containing plasma, a phosphorus-containing plasma, a boron-containing plasma, or an oxygen-containing plasma, and comprises a higher concentration of silicon, nitrogen, phosphorus, boron, or oxygen than the dielectric material layer, and a layer of metal contact product also being formed on the conductive substrate at an end of the opening within the dielectric material layer, the layer of metal contact product formed from reaction of the conductive substrate and the silicon-containing plasma, the nitrogen-containing plasma, the phosphorus-containing plasma, the boron-containing plasma, or the oxygen-containing plasma; performing a chemical treatment process, after performing the plasma treatment process, to remove the metal contact product; disposing a metal diffusion barrier liner in the opening and directly on the conductive substrate; and disposing a conductive material on the metal diffusion barrier liner to substantially fill the opening and form the interconnect structure. - View Dependent Claims (2, 3, 4)
-
-
5. A method of making an interconnect structure, the method comprising:
-
forming an opening within a dielectric material layer disposed on a conductive substrate, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the conductive substrate; performing a first plasma treatment process to chemically modify exposed surfaces of the dielectric material layer and the conductive substrate that line the opening, a chemically modified dielectric surface layer being formed that is more dense than the dielectric material layer, comprises a contact product formed from reaction of the dielectric material layer and plasma, the plasma being a silicon-containing plasma, a nitrogen-containing plasma, a phosphorus-containing plasma, a boron-containing plasma, or an oxygen-containing plasma, and comprises a higher concentration of silicon, nitrogen, phosphorus, boron, or oxygen than the dielectric material layer, and a layer of metal contact product also being formed on the conductive substrate at an end of the opening within the dielectric material layer, the layer of metal contact product formed from reaction of the conductive substrate and the silicon-containing plasma, the nitrogen-containing plasma, the phosphorus-containing plasma, the boron-containing plasma, or the oxygen-containing plasma; performing a second plasma treatment process, after performing the first plasma treatment process, to remove the metal contact product; disposing a metal diffusion barrier liner in the opening and directly on the conductive substrate; disposing a conductive material on the metal diffusion barrier liner in the opening to fill the opening; and performing a planarization process to form the interconnect structure. - View Dependent Claims (6, 7, 8, 9)
-
Specification