Method for manufacturing a semiconductor device at low temperature

• US 9,831,275 B2
• Filed: 01/29/2016
• Issued: 11/28/2017
• Est. Priority Date: 02/04/2015
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Okazaki, Kenichi, Kurosaki, Daisuke, Jintyou, Masami, Yamazaki, Shunpei
• Primary Examiner(s): ESKRIDGE, CORY W
• Application Number:
  US15/010,392
• Publication Number:
  US 20160225795A1
• Time in Patent Office: 669 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film at a first temperature;

processing the oxide semiconductor film into an island shape;

then, depositing a material to be a source electrode and a drain electrode by a sputtering method over the oxide semiconductor film;

processing the material to form the source electrode and the drain electrode;

then, forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode,

then forming a first barrier film over the protective insulating film;

adding excess oxygen or an oxygen radical to the protective insulating film through the first barrier film;

performing heat treatment at a second temperature lower than 400°

C. to diffuse the excess oxygen or the oxygen radical into the oxide semiconductor film;

removing the first barrier film or a part of the first barrier film, and a part of the protective insulating film by wet etching; and

then forming a second barrier film over the protective insulating film,

wherein temperatures of processes after processing the oxide semiconductor film into the island shape and before depositing the material to be the source electrode and the drain electrode are lower than or equal to the first temperature.

2. The method for manufacturing the semiconductor device, according to claim 1,

wherein the first barrier film is an indium tin oxide film, an indium tin silicon oxide film, or an indium oxide film.

3. The method for manufacturing the semiconductor device, according to claim 1,

wherein the second barrier film is a silicon nitride oxide film or a silicon nitride film.

4. The method for manufacturing the semiconductor device, according to claim 1,

wherein the oxide semiconductor film has a layered structure of a first oxide semiconductor film having an atomic ratio of In:

M;

Zn=4;

α

1 (1.5≦

α

1≦

2.5);

α

2 (2.5≦

α

2≦

3.5) and a second oxide semiconductor film having an atomic ratio of In;

M;

Zn=1;

β

1 (0.8≦

β

1≦

1.2);

β

2 (0.8≦

β

1≦

1.2), and

wherein M is aluminum, gallium, yttrium, or tin.

5. The method for manufacturing the semiconductor device, according to claim 1,

wherein the oxide semiconductor film includes a CAAC-OS.

6. The method for manufacturing the semiconductor device, according to claim 1,

wherein the second temperature is lower than 375°

C.

7. The method for manufacturing the semiconductor device, according to claim 1,

wherein the second temperature is higher than or equal to 340°

C. and lower than or equal to 360°

C.

8. The method for manufacturing the semiconductor device, according to claim 1,

wherein the protective insulating film has a layered structure including a first protective insulating film and a second protective insulating film over the first protective insulating film, and

wherein a part of the second protective insulating film is removed by wet etching.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film at a first temperature;

processing the oxide semiconductor film into an island shape;

then, depositing a material to be a source electrode and a drain electrode by a sputtering method;

processing the material to form the source electrode and the drain electrode;

then, forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode,

forming a metal oxide film as a first barrier film over the protective insulating film by a sputtering method to add excess oxygen or an oxygen radical to the protective insulating film; and

performing heat treatment at a second temperature lower than 400°

C. to diffuse the excess oxygen or the oxygen radical into the oxide semiconductor film,

wherein the oxide semiconductor film has a layered structure of a first oxide semiconductor film having an atomic ratio of In;

M;

Zn=4;

α

1 (1.5≦

α

1≦

2.5);

α

2 (2.5≦

α

2≦

3.5) and a second oxide semiconductor film having an atomic ratio of In;

M;

Zn =1;

β

1 (0.8≦

β

1≦

1.2);

β

2 (0.8≦

β

2≦

1.2),

wherein M is aluminum, gallium, yttrium, or tin, and

wherein temperatures of processes after processing the oxide semiconductor film into the island shape and before depositing the material to be the source electrode and the drain electrode are lower than or equal to the first temperature.

10. The method for manufacturing the semiconductor device, according to claim 9,

wherein the metal oxide film is an aluminum oxide film, a hafnium oxide film, or an yttrium oxide film.

11. The method for manufacturing the semiconductor device, according to claim 9,

wherein the oxide semiconductor film includes a CAAC-OS.

12. The method for manufacturing the semiconductor device, according to claim 9,

wherein the second temperature is lower than 375°

C.

13. The method for manufacturing the semiconductor device, according to claim 9,

wherein the second temperature is higher than or equal to 340°

C. and lower than or equal to 360°

C.

14. The method for manufacturing the semiconductor device, according to claim 9,

wherein the protective insulating film has a layered structure including a first protective insulating film and a second protective insulating film over the first protective insulating film, and

wherein a part of the second protective insulating film is removed by wet etching.

15. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film at a first temperature;

processing the oxide semiconductor film into an island shape;

after processing the oxide semiconductor film, depositing a material to be a source electrode and a drain electrode over the oxide semiconductor film by a sputtering method;

processing the material to form the source electrode and the drain electrode;

forming a first protective insulating film and a second protective insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;

heating the first protective insulating film and the second protective insulating film at a second temperature higher than the first temperature;

after heating the first protective insulating film and the second protective insulating film, forming a first barrier film over the second protective insulating film;

adding excess oxygen or an oxygen radical to the second protective insulating film through the first barrier film;

after adding the excess oxygen or the oxygen radical, removing a part of the first barrier film and a part of the second protective insulating film by wet etching; and

after removing the part of the first barrier film and the part of the second protective insulating film, forming a second barrier film over the second protective insulating film at a third temperature higher than the first temperature,

wherein one of or both the second temperature and the third temperature is/are the highest in a process of the steps.

16. The method for manufacturing the semiconductor device, according to claim 15,

wherein the oxide semiconductor film has a layered structure of a first oxide semiconductor film having an atomic ratio of In:

M;

Zn=4;

α

1 (1.5≦

α

1≦

2.5);

α

2 (2.5≦

α

2≦

3.5) and a second oxide semiconductor film having an atomic ratio of In;

M;

Zn=1;

α

1 (0.8≦

β

1≦

1.2);

β

2 (0.8≦

α

2≦

1.2), and

wherein M is aluminum, gallium, yttrium, or tin.

17. The method for manufacturing the semiconductor device, according to claim 15,

wherein the oxide semiconductor film includes a crystal part, and

wherein the crystal part has c-axis alignment.

18. The method for manufacturing the semiconductor device, according to claim 15,

wherein the first temperature is lower than 340°

C.

19. The method for manufacturing the semiconductor device, according to claim 15,

wherein the first temperature is higher than or equal to 100°

C. and lower than or equal to 200°

C.

20. The method for manufacturing the semiconductor device, according to claim 15,

wherein the second temperature is lower than 375°

C.

21. The method for manufacturing the semiconductor device, according to claim 15,

wherein the second temperature is higher than or equal to 340°

C. and lower than or equal to 360°

C.