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Process for forming a short channel trench MOSFET and device formed thereby

  • US 9,831,336 B2
  • Filed: 11/10/2014
  • Issued: 11/28/2017
  • Est. Priority Date: 02/23/2006
  • Status: Active Grant
First Claim
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1. A short-channel trench MOSFET, comprising;

  • a substrate;

    a trench formed in said substrate;

    a first implant formed at a bottom of said trench; and

    a second implant formed in said substrate that is tilted in orientation and adjusted to not reach said bottom of said trench.

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