Process for forming a short channel trench MOSFET and device formed thereby
First Claim
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1. A short-channel trench MOSFET, comprising;
- a substrate;
a trench formed in said substrate;
a first implant formed at a bottom of said trench; and
a second implant formed in said substrate that is tilted in orientation and adjusted to not reach said bottom of said trench.
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Abstract
A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or angled implant that is tilted in its orientation and directed perpendicular to the trench that is formed in the body of the trench MOSFET. The second implant is adjusted so that it does not reach the bottom of the trench. In one embodiment the angled implant is n-type material.
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Citations
20 Claims
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1. A short-channel trench MOSFET, comprising;
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a substrate; a trench formed in said substrate; a first implant formed at a bottom of said trench; and a second implant formed in said substrate that is tilted in orientation and adjusted to not reach said bottom of said trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A trench MOSFET, comprising;
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a substrate; a trench formed in said substrate; a first implant formed at a bottom of said trench; and a second implant formed in said substrate that is tilted in orientation, having a serpentine shape, and adjusted to not reach said bottom of said trench. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A short channel trench MOSFET, comprising;
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a substrate; a trench formed in said substrate; a first implant formed at a bottom of said trench; and a second implant formed in said substrate via angled implantation, wherein said second implant has a doping profile reflecting said angled implantation, and adjusted to not reach said bottom of said trench, wherein said second implant is configured to prevent pinch-off of said short channel. - View Dependent Claims (18, 19, 20)
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Specification