Semiconductor device
First Claim
1. A semiconductor device comprising:
- a multi-layer film including a first oxide layer, an oxide semiconductor layer over the first oxide layer, and a second oxide layer over the oxide semiconductor layer;
a gate insulating film in contact with the multi-layer film;
a gate electrode overlapping with the multi-layer film with the gate insulating film therebetween; and
a protective layer over the gate electrode, the protective layer comprising a first layer and a second layer over the first layer,wherein each of the first oxide layer, the second oxide layer, and the oxide semiconductor layer contains indium,wherein the oxide semiconductor layer is in contact with each of the first oxide layer and the second oxide layer,wherein an energy at a bottom of a conduction band of the first oxide layer is larger than an energy at a bottom of a conduction band of the oxide semiconductor layer,wherein an energy at a bottom of a conduction band of the second oxide layer is larger than the energy at the bottom of the conduction band of the oxide semiconductor layer,wherein at least one of the first oxide layer, the oxide semiconductor layer, the second oxide layer includes a crystal,wherein a c-axis of the crystal is substantially parallel to a normal vector of a surface of the second oxide layer,wherein a concentration of silicon in the oxide semiconductor layer is less than 1×
1019 atoms/cm3 ,wherein the first layer comprises silicon oxide and is configured to release oxygen by heat treatment, andwherein the second layer comprises silicon nitride which is configured to block oxygen.
1 Assignment
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Accused Products
Abstract
A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable semiconductor device including the transistor is provided. A semiconductor device includes a multi-layer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multi-layer film, and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. In the semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer is in contact with the oxide layer, and the oxide layer contains indium and has a larger energy gap than the oxide semiconductor layer.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a multi-layer film including a first oxide layer, an oxide semiconductor layer over the first oxide layer, and a second oxide layer over the oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; a gate electrode overlapping with the multi-layer film with the gate insulating film therebetween; and a protective layer over the gate electrode, the protective layer comprising a first layer and a second layer over the first layer, wherein each of the first oxide layer, the second oxide layer, and the oxide semiconductor layer contains indium, wherein the oxide semiconductor layer is in contact with each of the first oxide layer and the second oxide layer, wherein an energy at a bottom of a conduction band of the first oxide layer is larger than an energy at a bottom of a conduction band of the oxide semiconductor layer, wherein an energy at a bottom of a conduction band of the second oxide layer is larger than the energy at the bottom of the conduction band of the oxide semiconductor layer, wherein at least one of the first oxide layer, the oxide semiconductor layer, the second oxide layer includes a crystal, wherein a c-axis of the crystal is substantially parallel to a normal vector of a surface of the second oxide layer, wherein a concentration of silicon in the oxide semiconductor layer is less than 1×
1019 atoms/cm3 ,wherein the first layer comprises silicon oxide and is configured to release oxygen by heat treatment, and wherein the second layer comprises silicon nitride which is configured to block oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification