Optoelectronic semiconductor component

• US 9,831,394 B2
• Filed: 07/07/2015
• Issued: 11/28/2017
• Est. Priority Date: 07/29/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Binder, Michael, Linkov, Alexander, Zeiler, Thomas, Brick, Peter
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Jiang, Fang-Xing
• Application Number:
  US14/793,096
• Publication Number:
  US 20150311404A1
• Time in Patent Office: 875 Days
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) has at least one side face (31) which extends at least in places at an angle β of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Claims

1. A method of producing an optoelectronic semiconductor component, comprising the following steps:

providing a connection carrier with a mounting face;

attaching and electrically contacting an optoelectronic semiconductor chip to the mounting face;

molding a radiation-transmissive body around the optoelectronic semiconductor chip; and

sawing the radiation-transmissive body at an angle of <

90°

to the mounting face of the connection carrier in order at least in places to produce a side face of the radiation-transmissive body;

wherein the side face extends at least in places at an angle of less than 90°

to the mounting face of the connection carrier; and

wherein the radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner and

wherein the optoelectronic semiconductor chip emits or receives light during its operation and the radiation-transmissive body is transmissive to the light emitted or received by the optoelectronic semiconductor chip.

2. The method according to claim 1, further comprising a step of sawing the radiation-transmissive body entirely at an angle of <

90°

to the mounting face of the connection carrier in order to produce four side faces of the radiation-transmissive body, such that the radiation-transmissive body takes the form of a truncated pyramid.

3. The method according to claim 1, wherein a planarisation layer is sprayed onto the side face of the radiation-transmissive body that is produced by sawing.

4. The method according to claim 1, further comprising a step of arranging at least one layer between the radiation-transmission body and the connection carrier, wherein the layer increases the adhesion between the radiation-transmissive body and the connection carrier.

5. The method according to claim 4, wherein the radiation-transmissive body contains a silicone and the layer comprises a silicone foil.

6. The method according to claim 1, wherein the connection carrier forms part of the casting.

7. The method according to claim 1, wherein the connection carrier comprises a base member made of a ceramic material, and wherein the base member has a thickness of to at least 100 μ

m and at most 400 μ

m.

8. The method according to claim 6, wherein the connection carrier comprises a base member, wherein the radiation-transmissive body directly adjoins the mounting face of the connection carrier.

9. The method according to claim 1, wherein the connection carrier has saw markings on the mounting face that define the position of the radiation-transmissive body relative to the semiconductor chip.

10. The method according to claim 1, wherein different shaped saw blades are used.

11. The method according to claim 1, wherein material of the radiation-transmissive body is torn out during sawing forming singulation traces in the radiation-transmissive body.

12. The method according to claim 11, wherein the singulation traces comprise indentations in the radiation-transmissive body.

13. The method according to claim 1, wherein four side faces of the radiation-transmissive body are produced by sawing the radiation-transmissive body,

wherein each of the four side faces extends completely at an angle of less than 90°

to the mounting face, such that the radiation-transmissive body takes the form of a truncated pyramid,

wherein each of the four side faces is produced in its entirety by sawing the radiation-transmissive body, and

wherein the radiation-transmissive body comprises at least one side face, which extends at least in places at an angle of between 60° and

70°

to the mounting face.